Wafer Near-Edge Roundness Control for Smooth Bevel Transitions

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Solution Overview

Problem

The transition from the semiconductor wafer top surface to the bevel affects device yield due to lithography process issues, in-process layers peeling, and edge flake defects, necessitating a smooth transition to improve yield.

Innovation Solution

Determine near edge region (NER) roundness parameters such as radius and theta angle using a computer device to analyze wafer edge profiles, adjust processing tools, and implement early detection and correction of anomalies in front-end tools to ensure smooth transitions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional wafer inspection methods are used, then general wafer quality is maintained, but near edge region defects such as lithography process issues, layer peeling, and edge flake defects occur due to insufficient transition smoothness

Engineering Contradiction:
Improvenear edge region transition smoothnessVSAvoiddevice yield
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent replaces conventional mechanical contact-based roundness measurement systems with a non-contact optical scanning system. The optical scanner uses light to capture wafer edge profiles and calculate NER parameters, eliminating mechanical contact that could damage the wafer or introduce measurement errors in the delicate near edge region.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces new measurement parameters (NER radius and theta angle) that specifically characterize the near edge region transition geometry. These parameters enable precise quantification and control of the transition smoothness from top surface to bevel, allowing optimization of this critical region that was previously difficult to measure and control.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If early detection and correction of tool anomalies are implemented, then device yield is improved, but processing time and complexity increase

Engineering Contradiction:
Improvedevice yieldVSAvoidprocessing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent performs NER parameter measurement and tool anomaly detection early in the manufacturing process, before wafers undergo subsequent processing steps. This preliminary detection allows for early correction of tool issues, preventing defect propagation through the manufacturing process and reducing overall processing time by avoiding rework later.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements a feedback mechanism where NER parameter measurements are continuously monitored and used to detect tool anomalies. When deviations are detected, the system provides feedback to adjust tool parameters or alert operators, enabling real-time correction that maintains high device yield without requiring complete process shutdowns.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS20250273519A1Systems and methods for processing semiconductor wafers using near edge region roundness
Publication Date: 2025.08.28 GLOBALWAFERS CO LTD
  • US20250273519A1 patent drawing
  • US20250273519A1 patent drawing
  • US20250273519A1 patent drawing

AI summary

A computer device for analyzing a processed product includes at least one processor in communication with at least one memory device. The at least one processor is programmed to: a) receive scan data of a first inspection of a first product being assembled after the first product has been processed by a tool; b) determine an edge profile for the product based upon the scan data; c) determine a center point for the edge profile; d) generate a best fit circle based upon the edge profile and the center point; e) calculate a NER radius for the first product based upon the best fit circle; and f) adjust operation of the tool based upon the NER radius.