Wafer Edge Etching Chamber With Thermal Width Control
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Solution Overview
Problem
Existing semiconductor wafer edge processing technologies face challenges in achieving uniform, smooth, and damage-free etched edges due to inaccuracies in etching width, which affects the quality of integrated circuit chips and increases manufacturing costs due to the need for multiple devices with different etching sizes to meet varying requirements.
Innovation Solution
A semiconductor processing device with a temperature control component that adjusts the temperature of the upper and lower chambers, utilizing heat-expansion and cold-contraction to fine-tune the etched width of the wafer edge, and a protrusion part to align and etch the wafer edge accurately, allowing for precise control of the etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional polishing or vacuum tip methods are used for wafer edge processing, then the process is simple and cost-effective, but the etching width uniformity deteriorates due to damage to the thin layer and substrate layer
Solution Approach 1:
The patent changes the fundamental parameter of the etching method from physical removal (polishing) or mechanical holding (vacuum tip) to chemical etching using a chemical etching solution. This allows precise control of the etching width through chemical reaction parameters while maintaining process simplicity and avoiding mechanical damage to the wafer layers.
Solution Approach 2:
The patent replaces mechanical polishing systems and vacuum tip holding systems with a chemical etching system. The chemical etching solution selectively removes material through chemical reaction rather than mechanical force, eliminating the damage associated with mechanical methods while achieving uniform etching widths.
2Reliability
If filming method is used to protect parts of the wafer, then the thin layer can be retained, but the etching width becomes uneven due to misalignment of the pre-cut film center with the wafer substrate center
Solution Approach 1:
The patent extracts and removes the problematic filming step from the process. Instead of using pre-cut films that require precise alignment, the method directly applies chemical etching solution to the wafer edge, eliminating the alignment issue entirely while still achieving selective removal of the thin layer where needed.
3Manufacturing precision
If shower method with special nozzle is used for accurate etching, then the etching precision is improved, but the equipment complexity and process cost increase significantly
Solution Approach 1:
The patent replaces expensive, complex shower nozzles and specialized equipment with a simpler chemical etching solution system. The method uses readily available chemical etching solutions and basic dispensing equipment, eliminating the need for costly specialized nozzles while achieving accurate etching through chemical control rather than mechanical precision.
4Adaptability or versatility
If multiple devices with different etching sizes are manufactured to meet varying requirements, then the adaptability to different specifications is improved, but the manufacturing cost increases
Solution Approach 1:
The patent creates a universal chemical etching system that can handle various wafer sizes and etching width requirements using a single device. By controlling the chemical etching solution application parameters (flow rate, concentration, exposure time) rather than requiring different physical devices, the system achieves multi-functionality without increasing manufacturing cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the precision and uniformity of wafer edge etching, reduces the impact of temperature changes, and allows a single device to meet various etching width requirements, thereby improving chip quality and reducing manufacturing costs.
Implementation Method 1
a temperature control component configured to adjust a temperature of the upper chamber and/or the lower chamber to utilizing a heat-expansion and cold-contraction of the upper chamber and/or the lower chamber to fine tune a position of an edge of the first supporting area and/or the second supporting area
Data Source
AI summary
A semiconductor processing device includes a lower chamber having a first supporting area to support the wafer, an upper chamber having a second supporting area and a temperature control component. When the upper chamber is engaged with the lower chamber, the wafer is placed between the first and the second supporting areas. The temperature control component is disposed adjacent to the upper chamber and/or the lower chamber, to adjust the temperature of the upper chamber and/or the lower chamber by adjusting its own temperature. A first channel formed at an edge area of the first supporting area or the second supporting area. The first channel provides a first space for the flow of one or more chemical fluids for etching the edge area. The temperature control component adjusts the temperature of the upper chamber and/or the lower chamber, thereby adjusting an etching width of the edge of the wafer.