Semiconductor Wafer Edge Trimming Particle Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
During semiconductor device manufacturing, edge trimming generates particle debris that is difficult to remove, leading to wafer bonding issues and scrap due to the inefficacy of conventional cleaning methods.
Innovation Solution
A method involving the formation of a passivation layer and a first oxide cap layer, followed by an edge trimming process and subsequent removal of the oxide cap layer to completely eliminate particles, utilizing chemical mechanical polishing and high jet scrubbing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If edge trimming process is performed on the wafer, then the wafer edge damage is reduced, but particle debris is generated and left on the wafer surface
Solution Approach 1:
The patent introduces an oxide cap layer as an intermediary substance between the passivation layer and the trimming process. This oxide cap layer serves as a mediator that captures particle debris during trimming, allowing subsequent complete removal of particles through chemical etching of the oxide layer without damaging the underlying passivation layer or device structures.
Solution Approach 2:
The patent applies preliminary action by forming the oxide cap layer before the edge trimming process. This pre-formed protective layer is specifically designed to be removed afterward, enabling complete particle removal that prevents bonding defects. The preliminary formation of this sacrificial layer allows the trimming to proceed while setting up the conditions for complete particle elimination.
2Ease of manufacture
If conventional cleaning methods are used after trimming, then the process is simple, but particle debris cannot be removed completely
Solution Approach 1:
The patent changes the chemical parameter of the wafer surface by introducing an oxide cap layer with different chemical properties than the passivation layer. This parameter change enables selective chemical etching that completely removes particles, transforming the cleaning mechanism from mechanical/conventional methods to a chemical dissolution process that achieves complete particle elimination.
Solution Approach 2:
The oxide cap layer functions as a disposable, short-living protective element that is intentionally formed, used to capture particles during trimming, and then completely removed through chemical etching. This sacrificial layer approach trades the cost and complexity of forming and removing the oxide layer for the benefit of complete particle removal and prevention of bonding defects.
3Productivity
If particles remain on the wafer surface, then the manufacturing process continues, but wafer bonding bubbles and scrap occur
Solution Approach 1:
The patent performs preliminary action by forming the oxide cap layer and enabling complete particle removal before the wafer bonding process. This ensures that no particles remain to cause bonding bubbles or scrap, thereby maintaining high bonding reliability and productivity without rework or scrap.
Solution Approach 2:
The patent applies preliminary anti-action by using the oxide cap layer to prevent particles from adhering to the passivation layer and device structures. The oxide cap layer acts as a barrier that stops the harmful effect of particle contamination before it can cause bonding defects, and this protective action is maintained throughout the trimming process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes particles from the edge trimming process, preventing wafer bonding bubbles and scrap, and allows for a smooth bonding interface with a second oxide cap layer, enhancing the semiconductor device manufacturing process.
Implementation Method 1
A first oxide cap layer is formed to cover the passivation layer
Implementation Method 2
An edge trimming process is performed to polish an edge part of the first oxide cap layer, an edge part of the passivation layer and the edge part of the device wafer
Implementation Method 3
A removing process is performed to remove the first oxide cap layer after the edge trimming process is performed
Data Source
AI summary
A method of manufacturing a semiconductor device includes the following steps. A device wafer having a product-obtaining part and an edge part surrounding the product-obtaining part is provided. A passivation layer is formed to cover the device wafer. A first oxide cap layer is formed to cover the passivation layer. An edge trimming process is performed to polish an edge part of the first oxide cap layer, an edge part of the passivation layer and the edge part of the device wafer. A removing process is performed to remove the first oxide cap layer after the edge trimming process is performed. A second oxide cap layer is formed to cover the first oxide cap layer and the edge part of the device wafer.