Wafer Etching Nozzle Trajectories for In-Plane Uniformity
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Solution Overview
Problem
Existing semiconductor manufacturing processes suffer from in-plane uniformity issues due to singular points in etching profiles near the rotation axis, leading to deviations in residual thickness and potential deterioration of electrical characteristics in semiconductor devices.
Innovation Solution
A semiconductor manufacturing apparatus and method that employs a nozzle movement system to perform etching along specific trajectories, including first and second trajectories with strategically placed turnaround points, to enhance in-plane uniformity by compensating for singular points and inflection points in the etching flow, thereby optimizing the etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single scan trajectory with turnaround points near the center of the rotation axis is used, then the etching process can be completed efficiently, but singular points of etching amount occur causing in-plane uniformity deterioration
Solution Approach 1:
The single scan trajectory is divided into multiple separate trajectories (first trajectory and second trajectory). Each trajectory has its own turnaround points positioned at different locations, which disperses the concentration of singular points and prevents the accumulation of etching amount variations at any single location, thereby maintaining in-plane uniformity while preserving processing efficiency.
Solution Approach 2:
Different regions of the substrate are processed using trajectories with locally optimized turnaround point positions. The first trajectory serves regions on one side of the rotation axis while the second trajectory serves regions on the other side, ensuring that each local region receives appropriate etching treatment without being affected by singular points from other regions.
2Area of stationary object
If turnaround points are positioned near the center of the rotation axis, then the scan trajectory covers the entire substrate area, but singular points due to turnaround combine with inflection points of chemical solution flow causing etching profile deterioration
Solution Approach 1:
The turnaround points of the first and second trajectories are positioned asymmetrically with respect to the rotation axis. This asymmetric positioning ensures that singular points generated by turnaround do not coincide with the inflection points of chemical solution flow that naturally occur near the center, thereby preventing the叠加 effect that would otherwise cause severe etching profile deterioration while still achieving full substrate coverage.
3Area of stationary object
If the nozzle reciprocates between first and second positions multiple times with changing first positions, then comprehensive substrate coverage is achieved, but the complexity of the movement mechanism and control section increases
Solution Approach 1:
The system employs dynamic adjustment of trajectory parameters including turnaround point positions, scan speeds, and chemical solution flow rates. The control section dynamically modifies these parameters based on the specific trajectory being executed, allowing flexible adaptation to different substrate regions while maintaining relatively simple mechanical structures through software-based control complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described approach effectively enhances in-plane uniformity, reduces the risk of electrical characteristic deterioration, and ensures consistent residual thickness by dispersing the effect of singular points and optimizing etching parameters such as scan range, speed, and chemical solution flow rate.
Implementation Method 1
a rotation stage that rotates a wafer
Implementation Method 2
a nozzle that supplies a chemical solution to a processing surface of the wafer... to etch the wafer
Implementation Method 3
a nozzle movement section that moves the nozzle on such a scan trajectory as to cross the processing surface... moves the nozzle along at least one first trajectory and at least one second trajectory... so that the wafer is etched with the chemical solution
Data Source
AI summary
According to the present disclosure, a semiconductor manufacturing apparatus includes a rotation stage that rotates a wafer, a nozzle that supplies a chemical solution to the wafer and a nozzle movement section that moves the nozzle on a scan trajectory, wherein the nozzle movement section moves the nozzle along a first trajectory and a second trajectory on the scan trajectory, the first trajectory is a trajectory to turn around at a first turnaround point on one side and a second turnaround point on the other side with respect to a portion closest to a rotation axis of the rotation stage in the scan trajectory, and the second trajectory is a trajectory to turn around at a third turnaround point and a fourth turnaround point provided on the same side as the third turnaround point with respect to the portion closest to the rotation axis in the scan trajectory.