Semiconductor Wafer Etching With Volatile Organometallic Complexes
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in achieving efficient and yield-improved etching at the atomic layer level due to complex gas supply systems, interlayer diffusion, and thermal instability of organometallic complexes, leading to increased processing time and substrate contamination.
Innovation Solution
A semiconductor manufacturing method involving the use of an organic gas with a Lewis basic partial molecular structure to form a thermally stable and volatile organometallic complex, which is then vaporized and desorbed, allowing for efficient etching without the need for multiple gas reactions and reducing substrate contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If two different gases (reactive gas containing fluorine and ligand exchange agent) are used to react with the film layer to be processed, then selective etching at 400°C or lower can be achieved, but the gas supply system becomes complicated and the processing apparatus increases in size and cost
Solution Approach 1:
The patent combines the functions of the reactive gas containing fluorine and the ligand exchange agent into a single organic gas that contains both the fluorine component and the ligand exchange component. This single gas performs both the fluorination reaction and the ligand exchange reaction, eliminating the need for separate gas supply systems and reducing apparatus complexity while maintaining selective etching precision at 400°C or lower
2Reliability
If gas replacement in a chamber is performed between processing with the F-containing reactive gas and processing with the ligand exchange agent to prevent mixing, then cross-contamination is avoided, but processing time increases and throughput is impaired
Solution Approach 1:
The patent merges the fluorination and ligand exchange processes into a single simultaneous process using one organic gas, eliminating the need for gas replacement steps between processes. This maintains processing reliability by preventing gas mixing while significantly reducing processing time and improving throughput
3Productivity
If the volatile organometallic complex compound is allowed to volatilize from the film structure surface, then etching is achieved, but the compound thermally decomposes during discharge and reattaches to the substrate becoming foreign matter
Solution Approach 1:
The patent modifies the molecular structure of the organic gas to create an organometallic complex compound with improved thermal stability. By changing the ligand structure to have higher thermal stability while maintaining volatility, the compound can be effectively removed from the film surface through volatilization without decomposing and contaminating the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances processing efficiency and yield by enabling faster etching with improved thermal stability of the organometallic complex, reducing downtime and substrate contamination, and maintaining high volatility to prevent re-deposition.
Implementation Method 1
supplying an organic gas containing an organic compound having a Lewis basic partial molecular structure into the processing chamber; vaporizing and desorbing an organometallic complex formed by a reaction between the film and the organic gas containing the organic compound
Implementation Method 2
vaporizing and desorbing an organometallic complex formed by a reaction between the film and the organic gas
Implementation Method 3
vaporizing and desorbing an organometallic complex formed by a reaction between the film and the organic gas containing the organic compound
Data Source
AI summary
A semiconductor manufacturing method or apparatus for manufacturing a semiconductor device including a first process in which, for a semiconductor wafer having a film to be processed containing a typical metal element disposed on a surface thereof, an organometallic complex is formed on a surface of the film by increasing a temperature of the wafer after supplying an organic gas having a Lewis basic partial molecular structure into the processing chamber and adsorbing the gas onto the film, and the organometallic complex is vaporized and desorbed, and then a second process in which the organometallic complex formed on the surface of the film is vaporized and desorbed by stopping the supply of the gas and then increasing the temperature of the wafer stepwise after adsorbing the gas onto the surface of the film at a low temperature while supplying the organic gas containing the organic compound.