Semiconductor Wafer Etching with Single-Gas Organometallic Desorption
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Solution Overview
Problem
Existing semiconductor etching techniques require complex gas supplying systems and are prone to inefficiencies due to the need for separate reactive gases and ligand exchange agents, which can lead to interlayer diffusion and foreign matter contamination.
Innovation Solution
A method involving the use of an organic gas with electron-donating atoms to form a thermally stable organometallic complex in a single step, allowing for efficient etching at lower temperatures without the need for complex gas systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If two entirely different types of gases (reactive gas including F and ligand exchange agent) are used for etching, then selective etching at low temperature (≤400°C) is achieved, but the gas supplying system becomes complicated and the apparatus size increases
Solution Approach 1:
The patent combines the functions of reactive gas and ligand exchange agent into a single organometallic compound. This compound contains both the reactive element (e.g., Al, Hf, Zr) and the ligand structure in one molecule, eliminating the need for separate gas supply systems for each component while maintaining the ability to perform selective etching at low temperatures.
Solution Approach 2:
The invention uses organometallic compounds as composite materials that integrate the reactive metal center with organic ligands. This composite structure allows the single compound to perform both the reactive etching function and the ligand exchange function simultaneously, simplifying the overall gas supplying system.
2Manufacturing precision
If gas exchange is performed between reactive gas treatment and ligand exchange agent treatment, then reaction mixing is prevented, but cycle time lengthens due to halting periods and reaction induction periods
Solution Approach 1:
The patent enables continuous etching action by using organometallic compounds that decompose progressively during a single sustained heating period. The reaction continues without interruption as the compound decomposes layer-by-layer, eliminating the need for gas exchange halts and induction periods between reactions.
Solution Approach 2:
The organometallic compound is designed with preliminary structural arrangement where the ligand and reactive metal are pre-positioned in the same molecule. This preliminary configuration allows the reaction to proceed continuously without needing to switch between different gas supplies, as all necessary components are already integrated.
3Manufacturing precision
If organometallic complex is generated by ligand exchange reaction, then volatility is achieved, but thermal stability is poor causing decomposition to foreign matter
Solution Approach 1:
The patent modifies the parameters of the organometallic compound structure by selecting specific ligands and metal combinations that enhance thermal stability. By changing the molecular structure parameters (ligand type, metal selection, bonding configuration), the compound achieves both the required volatility for film removal and sufficient thermal stability to prevent premature decomposition into foreign matter.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures high treatment efficiency, reduces the occurrence of foreign matters, and simplifies the gas supplying system, thereby improving the overall process in semiconductor manufacturing.
Implementation Method 1
forming a compound made from the film to be treated and an organic gas by heating the semiconductor wafer while supplying the organic gas
Implementation Method 2
causing the compound to desorb from a surface of the semiconductor wafer by, on the basis of a result of the comparing, further heating the semiconductor wafer after the step of forming the compound
Implementation Method 3
causing the compound to desorb from a surface of the semiconductor wafer by, on the basis of a result of the comparing, further heating the semiconductor wafer
Data Source
AI summary
An objective of the present invention is to provide a method of manufacturing a semiconductor device and a semiconductor manufacturing apparatus that can ensure treatment efficiency and suppress the occurrence of foreign matters, without requiring a complicated gas supplying system. One representative method, according to the present invention, of manufacturing a semiconductor device includes a step of comparing a remaining amount of processing for a film to be treated that is formed on a semiconductor wafer, with a threshold, a step of forming a compound made from the film to be treated and an organic gas by heating the semiconductor wafer while supplying the organic gas, the organic gas including a material having, within a molecule, at least two substituents that hold a lone pair, and a step of causing the compound to desorb from a surface of the semiconductor wafer by, on the basis of a result of the comparing, further heating the semiconductor wafer after the step of forming the compound, to raise a temperature of the semiconductor wafer to a predetermined temperature.