Wafer Focus Spot Window Setting for Lithography Yield Recovery

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Solution Overview

Problem

Current focus spot window settings in photolithography technology do not achieve optimal yield for semiconductor products, as they are not tailored to individual machine processes, leading to inefficiencies and reduced production efficiency.

Innovation Solution

A method to determine a focus spot window by acquiring flatness and location information of a wafer, distribution information of abnormal dies, and wafer yield data, allowing for a process-specific focus spot window adjustment to improve lithography precision and yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single focus spot window is set for all machines, then the device complexity is reduced, but the manufacturing precision and product yield deteriorate

Engineering Contradiction:
Improvefocus spot window setting complexityVSAvoidlithography precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent segments the focus spot window setting from a universal machine-level parameter to a specific process/wafer-level parameter. By dividing the focus spot window determination into process-specific configurations based on wafer flatness characteristics, each process can have optimized parameters rather than using a single generic setting for all machines and processes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by determining focus spot windows based on local wafer flatness characteristics of specific regions. Different focus spot windows are assigned to different local regions of the wafer according to their flatness properties, allowing precise control tailored to each region's specific requirements rather than applying a uniform setting across the entire wafer.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If process-specific focus spot windows are determined using multiple parameters (flatness, abnormal die distribution, yield data), then the manufacturing precision improves, but the measurement and detection difficulty increases

Engineering Contradiction:
Improvelithography precisionVSAvoidwafer flatness measurement complexity
Core Design Contradiction:
Manufacturing precisionVSDifficulty of detecting and measuring

Solution Approach 1:

The patent performs preliminary actions by measuring and analyzing wafer flatness characteristics, abnormal die distribution patterns, and yield data before determining the optimal focus spot window. This advance preparation and data collection enable the system to establish process-specific parameters proactively, avoiding the need for complex real-time adjustments during lithography operations.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback mechanisms by utilizing wafer yield data and abnormal die distribution information to continuously refine and optimize focus spot window settings. The system feeds back performance data from previous processes to adjust and improve subsequent focus spot window determinations, creating a closed-loop optimization system that reduces measurement complexity over time through learned patterns.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS11988612B2Methods for determining focus spot window and judging whether wafer needs to be reworked
Publication Date: 2024.05.21 CHANGXIN MEMORY TECH INC
  • US11988612B2 patent drawing
  • US11988612B2 patent drawing
  • US11988612B2 patent drawing

AI summary

The present disclosure provides methods for determining a focus spot window of a wafer and judging whether the wafer needs to be reworked, belonging to the field of semiconductor technology. The method for determining a focus spot window of a wafer includes: acquiring flatness information and location information of a local region of the wafer before exposure; acquiring distribution information of abnormal dies, process information corresponding to the abnormal dies, and data information related to wafer yield; and determining the focus spot window corresponding to a process according to the flatness information and the location information of the local region of the wafer, the distribution information of the abnormal dies, the process information corresponding to the abnormal dies, and the data information related to wafer yield.