Controllable Diffuser Layout for Uniform Wafer Process Gas
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Solution Overview
Problem
The migration to larger wafers in semiconductor manufacturing poses challenges in maintaining a uniform processing environment, particularly in the distribution of process gas across the wafer, leading to non-uniform processing results.
Innovation Solution
A controllable diffuser is employed in the process chamber to generate controllable forces that spread the gaseous material uniformly across the wafer, using electrostatic forces or pressurized gas jets to deflect the gaseous material in various directions, allowing for precise control of the distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If larger wafers are used to increase production capacity, then the number of chips per wafer increases, but the uniformity of process gas distribution across the wafer deteriorates
Solution Approach 1:
The process chamber is divided into multiple zones with independently controllable gas distribution systems. Each zone can have its gas flow, pressure, and temperature independently adjusted to achieve uniform processing across the entire large wafer surface, resolving the contradiction between large wafer size and uniform gas distribution.
Solution Approach 2:
Different regions of the process chamber are provided with locally optimized conditions through multiple gas inlets and diffusers positioned at specific locations. This allows each local area to receive appropriately tailored gas distribution parameters, ensuring uniform processing across the large wafer while maintaining high productivity.
2Productivity
If process gas is supplied to larger wafers, then production capacity increases, but the uniformity of processing environment deteriorates
Solution Approach 1:
The gas distribution system incorporates dynamically adjustable parameters including variable flow rates, adjustable pressure control, and movable diffusers that can be positioned and tilted to optimize gas distribution. This dynamic control enables uniform processing environment across large wafers while maintaining high production capacity.
Solution Approach 2:
Sensors are positioned throughout the process chamber to monitor gas distribution uniformity, temperature, and pressure in real-time. This feedback information is used to dynamically adjust gas flow rates and diffuser positions, ensuring uniform processing environment across the entire large wafer surface while maximizing productivity.
3Manufacturing precision
If conventional gas distribution methods are used, then device complexity remains low, but gas distribution uniformity deteriorates
Solution Approach 1:
Diffusers are introduced as intermediary components between the gas inlets and the wafer surface. These diffusers actively scatter and redistribute the process gas to achieve uniform distribution across the large wafer. The diffusers can be tilted and positioned to optimize gas flow patterns, improving uniformity while adding controlled complexity to the system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures a more uniform distribution of gaseous material, resulting in improved uniformity of processed films and layers on the wafer, enhancing yield and quality.
Implementation Method 1
A wafer processing method is provided including introducing a gaseous material into a process chamber through an inlet, controlling distribution of the gaseous material in the process chamber using a plurality of controllable diffusers, wherein controlling the distribution of the gaseous material includes generating controllable forces acting in various directions
Implementation Method 2
using electrostatic forces or pressurized gas jets to deflect the gaseous material in various directions
Data Source
AI summary
A device includes a plurality of controllable diffusers configured to control dispersing forces within a processing chamber. The plurality of controllable diffusers includes a first electrode configured to receive an input signal, and a second electrode electrically connected to the first electrode by a first conductor, wherein the first conductor is configured to convey the input signal from the first electrode to the second electrode and to suspend the second electrode from the first electrode.