Wafer Grinding Control via Test Wafer Feedback

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Solution Overview

Problem

Conventional grinding devices fail to achieve the required flatness in thinned wafers due to limitations in operating mode and processing precision, resulting in significant errors in wafer flatness during the thinning process.

Innovation Solution

A grinding control method and device that uses a test wafer to adjust the grinding parameters based on thickness variations measured by a dedicated device, updating the parameters to improve the flatness of mass production wafers by determining when to perform a test using a test wafer based on cycle thresholds or thickness deviations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a grinder is used to quickly thin the wafer, then productivity is improved, but manufacturing precision deteriorates due to large errors in flatness

Engineering Contradiction:
Improvethinning speedVSAvoidflatness error
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent implements a feedback control mechanism where the flatness measurement device measures the flatness of the wafer during grinding, and the grinding device adjusts grinding parameters based on the measured flatness data. This closed-loop feedback system enables the grinder to maintain high productivity while automatically correcting flatness errors, thus resolving the contradiction between fast thinning speed and flatness precision

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent changes grinding parameters (such as grinding wheel speed, feed rate, or grinding wheel position) based on real-time flatness measurements. By dynamically adjusting these parameters during the grinding process, the system maintains high productivity while correcting flatness deviations, thereby resolving the contradiction between fast processing and precision flatness control

Inventive Principle:
Principle #35Parameter changes

2Ease of operation

If conventional grinding device operating mode is used, then ease of operation is maintained, but manufacturing precision deteriorates due to limitation in processing precision

Engineering Contradiction:
Improveoperating simplicityVSAvoidflatness error
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The patent enables the grinding device to automatically measure and adjust its own grinding parameters based on real-time flatness feedback. The system performs self-diagnosis and self-correction without requiring manual intervention, maintaining ease of operation while significantly improving flatness precision through automated control

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The integrated flatness measurement and automatic adjustment system provides continuous feedback to the grinding device, enabling it to automatically correct flatness errors while requiring minimal operator input. This feedback mechanism resolves the contradiction by maintaining operational simplicity while achieving high precision through automated control loops

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS11587838B2Grinding control method and device for wafer, and grinding device
Publication Date: 2023.02.21 WUHAN XINXIN SEMICON MFG CO LTD
  • US11587838B2 patent drawing
  • US11587838B2 patent drawing
  • US11587838B2 patent drawing

AI summary

A grinding control method and device for a wafer, and a grinding device are provided. A grinder is controlled to grind a mass production wafer with a set grinding parameter. In a case that it is determined to perform a test using a test wafer, the grinder may be controlled to grind the test wafer with the set grinding parameter. A first total thickness variation of the grinded test wafer is acquired by a dedicated measurement device, and an updated grinding parameter is acquired based on the first total thickness variation. The grinder is controlled to grind the mass production wafer with the updated grinding parameter. In this way, a wafer with a uniform thickness can be obtained, thereby improving flatness of the grinded wafer.