Wafer Heat Processing Gas Flow Switching for Uniformity and Yield
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Solution Overview
Problem
Current heat processing techniques for semiconductor wafers face challenges in achieving both high uniformity and high product yield, particularly in removing sublimed substances that can cause defects in minute patterns, and fail to address the need for improved CD uniformity and yield in advanced coating films like ArF.
Innovation Solution
A heat processing apparatus with a dual gas flow mechanism that switches between uniform heat distribution and substance removal modes, using downflows and exhaust gas flows to ensure uniform heating and effective removal of sublimed substances, respectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas flows are formed from around the heating plate toward the center with exhaust upward from the center, then heat process uniformity is improved, but sublimed substances cannot be sufficiently removed causing product yield deterioration
Solution Approach 1:
The gas flow control is divided into multiple independent flow paths: a first gas flow path supplies gas from around the heating plate toward the center, a second gas flow path supplies gas uniformly onto the entire substrate surface, and a third gas flow path exhausts gas from the center upward. These segmented flow paths allow simultaneous achievement of heat uniformity and sublimed substance removal
Solution Approach 2:
Multiple gas flow functions are merged into a single heat processing apparatus by providing multiple gas supply and exhaust mechanisms that operate concurrently. The first gas supply mechanism, second gas supply mechanism, and exhaust mechanism work together in coordination to achieve both uniform heating and effective removal of sublimed substances
2Manufacturing precision
If gas flows uniformly strike the entire surface of the substrate, then film thickness uniformity is improved, but sublimed substances cannot be sufficiently removed
Solution Approach 1:
The gas flow control is divided into multiple independent flow paths: a first gas flow path supplies gas from around the heating plate toward the center, a second gas flow path supplies gas uniformly onto the entire substrate surface, and a third gas flow path exhausts gas from the center upward. These segmented flow paths allow simultaneous achievement of heat uniformity and sublimed substance removal
Solution Approach 2:
Multiple gas flow functions are merged into a single heat processing apparatus by providing multiple gas supply and exhaust mechanisms that operate concurrently. The first gas supply mechanism, second gas supply mechanism, and exhaust mechanism work together in coordination to achieve both uniform heating and effective removal of sublimed substances
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables both high uniformity and high product yield by ensuring uniform heating in the first mode and efficient removal of sublimed substances in the second mode, addressing the limitations of existing techniques and improving CD uniformity and yield.
Implementation Method 1
a heating plate configured to heat the substrate
Implementation Method 2
a first gas flow forming mechanism configured to form gas flows mainly arranged to realize a uniform heat process, and a second gas flow forming mechanism configured to form gas flows mainly arranged to exhaust and remove gas and/or sublimed substances generated from the substrate
Implementation Method 3
a heat processing apparatus (hot plate unit) provided with a heating plate (hot plate) heated by a heater
Data Source
AI summary
A heat processing apparatus includes a heating plate configured to heat the substrate; a cover configured to surround a space above the heating plate; an exhaust gas flow forming mechanism configured to exhaust gas inside the cover to form exhaust gas flows within the space above the heating plate; a downflow forming mechanism configured to form downflows uniformly supplied onto an upper surface of the substrate placed on the heating plate; and a control mechanism configured to execute mode switching control between a mode arranged to heat the substrate while forming the downflows by the downflow forming mechanism and a mode arranged to heat the substrate while forming the exhaust gas flows by the exhaust gas flow forming mechanism.