Multi-Zone Wafer Heater Layout With Shared Return Path
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in efficiently manufacturing multi-zone heater layers due to the difficulty and expense of drilling numerous holes for power supply and current return, especially as the number of zones increases.
Innovation Solution
The plasma processing apparatus incorporates a cylindrical sample table with a first heater layer composed of film-shaped heaters disposed in rectangular regions, corresponding to circuit patterns on the wafer. This design includes a plurality of temperature sensors in the base material below the heater regions and employs a method to collect return current to the base material, reducing the need for multiple holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple holes are drilled in the base material for power supply and current return in each heater zone, then the heater layer can be manufactured with precise temperature control, but the manufacturing cost and difficulty increase significantly
Solution Approach 1:
The patent merges the current return path into the base material itself rather than requiring separate holes for each heater zone. The base material serves as a common current return path for multiple heater zones, eliminating the need for individual return holes in each zone and reducing the total number of holes required.
Solution Approach 2:
The base material is given multiple functions: it serves as both the structural support for the heater layer and as the current return path. This multi-functionality eliminates the need for separate current return structures and reduces manufacturing complexity.
2Manufacturing precision
If the number of heater zones is increased to improve temperature control, then processing accuracy is improved, but the number of holes required for power supply and current return increases, making manufacturing more expensive and difficult
Solution Approach 1:
Multiple heater zones share common power supply and current return paths through the base material. Instead of requiring separate holes for each zone, the base material serves as a shared pathway, reducing the total number of holes while maintaining multiple temperature zones.
Solution Approach 2:
The current return path is moved from a two-dimensional surface pattern (requiring holes in each zone) to a three-dimensional structure utilizing the thickness of the base material itself, allowing current to return through the bulk material rather than requiring surface holes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for the safe, low-cost, and easy manufacturing of multi-zone heater layer electrodes, improving processing efficiency and accuracy while reducing manufacturing complexity and costs.
Implementation Method 1
a first heater layer disposed in a dielectric film covering an upper surface of a disk-shaped base material of the sample table, the first heater layer including a plurality of film-shaped heaters
Implementation Method 2
a plurality of temperature sensors disposed in the base material below the rectangular regions of the first heater layer
Implementation Method 3
a processing chamber disposed in a vacuum container and configured to allow a wafer to be processed to be disposed and allow plasma to be formed in the processing chamber
Data Source
AI summary
A plasma processing apparatus for manufacturing multi-zone heater layer electrodes including a first heater layer disposed in a dielectric film covering an upper surface of a sample table, the first heater layer including a plurality of film-shaped heaters each having a rectangular shape; and a plurality of temperature sensors disposed below the rectangular regions of the first heater layer and corresponding to circuit patterns of a plurality of semiconductor devices formed on an upper surface of a wafer, and include four regions each having one side facing an adjacent region, and with the film-shaped heaters disposed in the four regions being one set including four power supply paths and one return path, the four power supply paths being electrically each connected to one place of each of the film-shaped heaters of the set, and the one return path being electrically connected to another place of each of the film-shaped.