Wafer Heating Assembly Edge Cooling for Film Uniformity
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Solution Overview
Problem
The issue of poor film thickness uniformity on wafers during chemical vapor deposition (CVD) processes due to temperature variations across the wafer surface, leading to non-uniform film formation.
Innovation Solution
A heating device with a ventilation structure and cooling mechanism that includes gas channels and cooling channels to uniformly distribute heat across the wafer, ensuring consistent temperature distribution by cooling the edge area of the heating assembly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a susceptor is tilted at an angle to irradiate microwaves uniformly across the wafer surface, then microwave irradiation uniformity is improved, but the structure becomes more complex and control difficulty increases
Solution Approach 1:
The susceptor is made rotatable around the wafer, transforming from a static tilted structure to a dynamic rotating one. This allows uniform microwave irradiation through rotation rather than requiring a complex fixed tilted geometry, simplifying the overall structure while maintaining irradiation uniformity.
Solution Approach 2:
The susceptor serves multiple functions: it holds the wafer, provides the primary heating surface, and acts as a rotating mechanism for uniform irradiation distribution. This multi-functionality eliminates the need for separate tilting mechanisms, reducing structural complexity.
2Manufacturing precision
If the susceptor rotation speed is increased to improve temperature uniformity, then temperature distribution is improved, but power consumption increases and processing time may be affected
Solution Approach 1:
The susceptor rotates at a speed that provides sufficient uniformity without excessive speed. The patent specifies a rotation speed range (5-50 rpm) that achieves the desired temperature uniformity while avoiding unnecessary energy consumption associated with higher rotation speeds.
Solution Approach 2:
The rotation speed is optimized within a specific range to balance temperature uniformity and power consumption. By changing the rotation speed parameter to an optimal value, the system achieves adequate mixing and uniformity without excessive energy use.
3Loss of energy
If the susceptor diameter is reduced to match the wafer size and reduce unused heating, then energy efficiency is improved, but the susceptor becomes more susceptible to deformation under microwave irradiation
Solution Approach 1:
The susceptor diameter is matched to the wafer size, creating local quality where heating is concentrated only where needed (under the wafer). This reduces overall susceptor size and the volume of material subject to microwave-induced deformation, while maintaining effective heating coverage.
Solution Approach 2:
The susceptor dimensions are optimized to match the wafer parameters, changing the size parameter to reduce both energy waste and deformation susceptibility. The smaller, more appropriately sized susceptor experiences less total thermal stress and deformation under microwave irradiation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves uniform temperature distribution on the wafer, preventing non-uniform film thickness and improving the uniformity of film formation by maintaining consistent temperatures across different areas of the wafer.
Implementation Method 1
a susceptor 14 on which the wafer W is placed is heated by microwaves
Implementation Method 2
heat the wafer by bringing the susceptor into contact with the wafer
Data Source
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AI summary
The present disclosure discloses a heating device and a semiconductor processing apparatus. The disclosed heating device is configured to carry and heat a to-be-processed workpiece in the semiconductor processing apparatus. The heating device includes a base, a heating assembly, and a cooling mechanism. The heating assembly is provided with a ventilation structure. The ventilation structure is configured to blow gas to an edge of the to-be-processed workpiece. The base is arranged on a side of the heating assembly away from a heating surface of the heating assembly. The base and the heating assembly form a mounting space between each other. The cooling mechanism is arranged in the mounting space, located at a position corresponding to an edge area of the heating surface, and configured to cool the heating assembly. The above solution can solve the problem that the uniformity of the film formation of the wafer is poor.