Wafer Heating via Heated Inert Gas for Uniform Temperature
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Solution Overview
Problem
Single-wafer type substrate processing apparatuses face challenges in improving the yield and characteristics of films formed on wafers due to temperature differences between the front and back surfaces of the wafers, leading to potential bending and reduced throughput.
Innovation Solution
A substrate processing apparatus is designed with a heated gas supply system that heats both the front and back surfaces of the wafer, using a heated inert gas to maintain a predetermined temperature range and prevent bending, while also improving the heating efficiency and throughput by diffusing the heated gas within the processing chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single-wafer type substrate processing apparatus heats the wafer from one side only, then the heating structure is simple, but temperature difference between front and back surfaces causes wafer bending and reduced film quality
Solution Approach 1:
The heating system is segmented into two independent heating zones: a first heater that heats the wafer from the front surface side, and a second heater that heats the wafer from the back surface side. This segmentation allows independent control of heating for each surface, enabling uniform temperature distribution across the wafer and preventing bending, thereby improving film formation characteristics.
Solution Approach 2:
Different heating characteristics are applied to different regions of the wafer. The front surface heating system and back surface heating system can be independently controlled to provide appropriate temperature profiles for each surface, ensuring uniform overall temperature while accounting for specific thermal requirements of each wafer surface.
2Use of energy by moving object
If heated gas is supplied to heat the wafer, then heating efficiency is improved, but gas supply system complexity increases
Solution Approach 1:
A gas supply system is introduced to supply heated gas to the processing chamber. The gas is heated by a dedicated heater and then supplied to the chamber to assist in heating the wafer. This pneumatic approach improves heating efficiency by directly introducing thermal energy via gas convection, while the gas supply mechanism provides controlled and efficient heat transfer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures uniform heating of the wafer surfaces, preventing bending and enhancing the characteristics of the film formed, thereby improving the yield and processing efficiency of the substrate processing apparatus.
Implementation Method 1
a first heater configured to heat the substrate to a first temperature
Implementation Method 2
a second heater configured to heat an inert gas
Implementation Method 3
the heated gas supply system is configured to supply a heated inert gas into the processing vessel
Implementation Method 4
supply a heated inert gas into the processing vessel
Data Source
AI summary
Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate supporter including: a first heater configured to heat the substrate to a first temperature; and a substrate placing surface where the substrate is placed; a heated gas supply system including a second heater configured to heat an inert gas, wherein the heated gas supply system is configured to supply a heated inert gas into the processing vessel; and a controller configured to control the first heater and the second heater such that a temperature of a front surface of the substrate and a temperature of a back surface of the substrate are in a predetermined range.