Wafer Heating Platform With Zoned Feedback Temperature Control
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Solution Overview
Problem
Temperature control and uniformity are critical in wafer manufacturing processes like CVD, etching, and CMP, as non-uniform heating can lead to low yield rates due to variations in layer thickness and topography, affecting the quality and uniformity of deposited layers.
Innovation Solution
A heating platform with a support carrier, detection module, and dual heating modules (first and second heating modules) that monitor and adjust temperature distribution across the wafer, using independently controlled heating units arranged in arrays to ensure uniform or specific heat distribution, compensating for temperature differences and topography variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single heating module is used, then the device complexity is low, but the temperature uniformity across the wafer is insufficient
Solution Approach 1:
The heating system is divided into multiple independently controllable heating modules (first heating module and second heating module) that can be positioned at different locations relative to the wafer. Each module can be controlled separately to achieve uniform temperature distribution across the wafer surface, resolving the contradiction between temperature uniformity and device complexity.
Solution Approach 2:
Different regions of the wafer can receive different heating intensities from the multiple heating modules. The system allows localized temperature control where specific areas of the wafer can be heated to different temperatures based on process requirements, improving overall temperature uniformity while maintaining manageable device complexity through targeted heating zones.
2Measurement precision
If multiple heating modules are used, then the temperature control precision is improved, but the device complexity increases
Solution Approach 1:
The heating system incorporates temperature sensors that continuously monitor the temperature at different locations on the wafer. This feedback information is used to dynamically adjust the power supplied to each heating module, enabling precise temperature control despite the increased device complexity from having multiple modules.
Solution Approach 2:
The heating modules are designed with dynamic control capabilities, allowing their power output to be adjusted in real-time based on temperature feedback. This dynamic adjustment mechanism enables precise temperature control across the wafer while managing the complexity of the multi-module system through adaptive rather than static operation.
3Manufacturing precision
If heating is applied without compensation, then the process is simple, but the layer thickness uniformity deteriorates
Solution Approach 1:
The system performs preliminary temperature mapping and compensation calculations before the actual deposition process. By pre-characterizing the temperature distribution across the wafer and calculating the required compensation for each heating module, the system ensures uniform layer thickness without requiring complex real-time adjustments during the deposition process itself.
Solution Approach 2:
The heating system adjusts operational parameters (power levels, heating durations) of different heating modules based on pre-measured temperature variations and wafer topography. By changing these parameters in advance or in real-time, the system compensates for thermal non-uniformities and achieves uniform layer deposition, balancing manufacturing precision with controlled complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise temperature control and uniform heating of wafers, improving layer thickness uniformity and yield rates by compensating for temperature and topography variations, thus enhancing the quality and consistency of wafer manufacturing processes.
Implementation Method 1
The heating units are arranged in an array and electrically connected to the controller
Data Source
AI summary
A heating platform for heating a wafer is provided. The heating platform includes a support carrier, a detection module and a first heating module. The wafer is supported by the support carrier. The detection module is configured to monitor a surface condition of the wafer supported by the support carrier. The first heating module is disposed at a side of the support carrier. The first heating module includes a plurality of heating units electrically connected to the detection module, and the heating units is arranged in an array. A thermal treatment and a manufacturing method are further provided.