Wafer Holder Radiation Sensing for Uniform EUV Exposure
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Solution Overview
Problem
The semiconductor fabrication process faces challenges in achieving uniformity of radiation exposure across wafers due to limitations in existing CMOS image sensor methods, which are not compatible with advanced processes, have low sensitivity to extreme ultraviolet light, require external power supplies, and lack real-time monitoring of uniform exposure across multiple wafers.
Innovation Solution
A semiconductor fabrication apparatus with energy sensing pads on a chuck that can detect radiation intensity and adjust it automatically or manually to ensure uniform exposure, using self-powered CMOS-compatible sensors that can measure EUV and e-beams, and provide real-time feedback.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If existing CMOS image sensor methods are used to monitor radiation exposure, then real-time monitoring capability is provided, but the sensors have low sensitivity to extreme ultraviolet light and are not compatible with advanced fabrication processes
Solution Approach 1:
The sensing device is self-powered by harvesting energy from the radiation it detects. The radiation reception device converts incident radiation directly into electrical energy that powers the circuit, eliminating the need for external power supplies and making the device compatible with advanced fabrication processes that cannot accommodate additional power infrastructure.
Solution Approach 2:
The patent replaces traditional photodetector-based optical detection with a direct radiation-to-electricity conversion mechanism. The radiation reception device converts electromagnetic radiation energy directly into electrical signals and power, substituting mechanical/optical detection systems with an energy harvesting approach that is more sensitive and process-compatible.
2Duration of action of stationary object
If external power supplies are used to operate sensing devices, then continuous operation is ensured, but resource consumption increases and device complexity increases
Solution Approach 1:
The sensing device harvests energy from the radiation environment to power itself. The radiation reception device converts incident radiation into electrical energy that directly powers the circuit operations, making the device self-sufficient and eliminating continuous external power supply requirements.
Solution Approach 2:
The patent changes the operational mode from externally-powered continuous operation to self-powered operation based on radiation availability. The device adapts its power source from external supplies to internal radiation-harvested energy, changing the fundamental power parameter from fixed external supply to variable radiation-dependent supply.
3Manufacturing precision
If radiation intensity is not monitored and adjusted, then fabrication process is simpler, but uniformity of radiation exposure across wafers deteriorates
Solution Approach 1:
The sensing device provides real-time feedback about radiation intensity and uniformity across the wafer surface. The circuit processes signals from the radiation reception device and outputs information that can be used to adjust radiation source positioning or intensity, creating a closed-loop control system that maintains exposure uniformity.
Solution Approach 2:
The sensing device measures radiation distribution before the actual fabrication exposure occurs. This preliminary measurement allows operators to identify and correct uniformity issues before they affect the wafer, preventing defects rather than detecting them after the fact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus ensures uniform radiation exposure across wafers, reduces resource consumption by being self-powered, and allows for real-time monitoring and adjustment of radiation intensity, enhancing fabrication uniformity and efficiency.
Implementation Method 1
a radiation reception device configured to absorb radiation received over a top surface of the holder
Data Source
AI summary
A method for fabricating semiconductor devices is disclosed. In one aspect, a method for fabricating semiconductor devices comprises subsequently to exposing a first substrate placed on a holder with a radiation source, unloading the first substrate from the holder, exposing the holder with the radiation source to generate a reference signal; determining a level of the reference signal that is substantially proportional to an intensity of the radiation source, and prior to loading a second substrate, adjusting the intensity of the radiation source in response to determining that the level of the reference signal does not satisfy a predefined condition.