Wafer Inspection Color Correction Method

The inspection method divides the wafer surface into multiple regions and processes each region separately with optimized parameters. Small defects are detected using high-resolution analysis on specific regions, while other regions use faster processing, thus maintaining defect detection capability while improving overall throughput.

Instead of applying full high-resolution inspection to the entire wafer surface, the method applies enhanced inspection only to regions where small defects are suspected or where production history indicates higher risk, performing partial high-resolution analysis to maintain throughput while detecting critical defects.

The method applies different detection thresholds and analysis parameters to different regions of the wafer based on local characteristics. Regions with known color variations use adjusted thresholds to prevent false detections, while regions with stable characteristics use stricter thresholds for high sensitivity, thus maintaining overall detection accuracy while reducing false positives.

The inspection system dynamically adjusts detection parameters including thresholds, contrast enhancement levels, and color correction factors based on the specific wafer batch, production conditions, and observed color variations. This adaptive parameter adjustment maintains high defect detection sensitivity while compensating for production-induced color variations to reduce false detections.