Semiconductor Wafer Junction Repair by Local Laser Rebonding

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Solution Overview

Problem

The existing joining process for semiconductor wafers results in unjoined parts due to the presence of holding parts, leading to unstable behaviors, peeling, or insufficient pressure, which can render these parts useless or affect subsequent machining processes.

Innovation Solution

A joining correction method using laser light is applied to unjoined parts to correct the joined state, limiting heat exposure to these areas and preventing adverse effects on other parts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stress or pressure

If a holding part is used to hold semiconductor wafers during the joining process, then the wafers can be interposed under pressure, but laser light cannot be applied to the parts held by the holding part, resulting in unjoined parts

Engineering Contradiction:
Improvepressure applicationVSAvoidjoining completeness
Core Design Contradiction:
Stress or pressureVSManufacturing precision

Solution Approach 1:

The holding part is removed after the initial joining process before performing the correction process. This preliminary removal action allows laser light to be applied to previously obscured areas without interfering with the already-bonded regions, enabling complete joining coverage.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The holding part is extracted from the system after serving its primary function of maintaining pressure during initial joining. This extraction allows the laser beam to access and treat the unjoined parts that were previously blocked by the holding part structure.

Inventive Principle:
Principle #2Taking out (Extraction)

2Manufacturing precision

If laser light is applied to correct unjoined parts, then the joined state at unjoined parts can be improved, but heat may adversely affect other parts

Engineering Contradiction:
Improvejoining completenessVSAvoidheat influence
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The correction process applies laser light locally only to the unjoined parts rather than uniformly across the entire wafer surface. By targeting specific deficient areas with the laser beam, the treatment achieves effective bonding correction while minimizing heat exposure to already-bonded regions and other sensitive areas.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the formation of a favorable joined state between semiconductor wafers even if unjoined parts occur, ensuring stable and effective bonding.

Implementation Method 1

a joining correction method using laser light is applied to unjoined parts to correct the joined state

Methodology Applied
Scientific EffectLaser heating: Laser

Data Source

PatentEP4715867A1Method for repairing junction
Publication Date: 2026.03.25 TATSUMO KK
  • EP4715867A1 patent drawingFigure 1A~1B
  • EP4715867A1 patent drawingFigure 2A~2B
  • EP4715867A1 patent drawingFigure 3

AI summary

A joining correction method corrects a joined state at an unjoined part by applying laser light to the unjoined part if the unjoined part occurs in at least a part of a joining intended site in a joining process of joining two joining targets to each other at the joining intended site set in facing surfaces of the joining targets.