Wafer Contaminant Analysis via Laser Ablation
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Solution Overview
Problem
Conventional methods for analyzing contaminants on semiconductor wafers are time-consuming and can introduce additional contamination during the sample preparation process, leading to inaccurate data.
Innovation Solution
An apparatus and method utilizing a laser ablation device to extract a discrete specimen from the wafer surface for analysis, which includes a wafer holder with vacuum holes for secure placement, a laser ablation device with adjustable laser parameters, an analysis cell for specimen collection, and a high-resolution inductively coupled plasma mass spectroscopy (HR-ICP-MS) for contaminant analysis, allowing for direct analysis at the wafer level without sample preparation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional sample preparation methods (cutting, surface treatment) are used to analyze contaminants, then analysis can be performed, but additional contamination is introduced and analysis time increases
Solution Approach 1:
The invention extracts only the necessary information (contaminant particles) directly from the wafer surface using laser ablation, bypassing the need to extract physical sample pieces. The laser ablates contaminant particles directly into the analysis cell for immediate analysis, eliminating time-consuming sample preparation while maintaining analysis accuracy.
Solution Approach 2:
The invention replaces mechanical sample preparation methods (cutting, grinding, polishing) with a laser-based ablation system. The laser directly ablates contaminant particles from the wafer surface into the analysis cell, eliminating mechanical contact that causes additional contamination and reducing preparation time significantly.
2Productivity
If laser ablation is used to rapidly analyze contaminants, then analysis speed improves, but additional contamination may be generated during sample cutting
Solution Approach 1:
The system extracts only contaminant particles directly from the wafer surface using laser ablation, rather than cutting and transporting physical sample pieces. This extraction method eliminates the harmful effect of additional contamination during sample preparation while maintaining rapid analysis capability.
Solution Approach 2:
The invention replaces mechanical cutting and handling operations with laser ablation that directly vaporizes contaminant particles into the analysis cell. This substitution eliminates mechanical contact that generates additional contamination, achieving both rapid analysis and contamination-free sampling.
3Ease of manufacture
If direct laser irradiation to wafer is implemented, then sample preparation time is eliminated, but precise control of laser parameters is required
Solution Approach 1:
The laser system is designed with multi-functionality, integrating ablation, particle generation, and direct injection capabilities into a single device. The laser serves multiple purposes (removing contaminants, generating analyzable particles, controlling injection timing), reducing the need for separate sample preparation equipment and simplifying the overall system despite sophisticated parameter control requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the time required for contaminant analysis and prevents additional contamination, providing accurate and rapid detection of contaminants directly on the wafer surface.
Implementation Method 1
a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer
Implementation Method 2
an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser
Data Source
AI summary
Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.