Wafer Centering and EBR Measurement via Laser Reflection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in accurately detecting and correcting edge bead removal (EBR) size and wafer centering errors, which can lead to time loss, equipment damage, and quality deterioration due to reliance on operator skill and late detection.
Innovation Solution
A semiconductor manufacturing apparatus equipped with a rotatable device and a sensor system that uses a laser beam to detect changes in the wafer surface, allowing for precise measurement of EBR size and wafer centering, and includes a feedback system for automatic correction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If operator skill-based monitoring is used to check EBR size, then flexibility in operation is maintained, but measurement precision and reliability deteriorate due to dependency on operator skill level
Solution Approach 1:
The patent replaces manual operator-based visual inspection with an automated optical measurement system using laser beams and position-sensitive detectors. This substitution eliminates dependency on operator skill while maintaining operational flexibility through programmable measurement parameters and automated feedback control.
Solution Approach 2:
The patent introduces an intermediary measurement system consisting of laser beams, position-sensitive detectors, and signal processing units that act as a mediator between the EBR process and quality control. This intermediary automatically captures and analyzes EBR size data, providing objective measurements independent of operator capability.
2Productivity
If EBR size checking is performed after all processes, then complete process flow is maintained, but loss of time increases and quality deterioration occurs due to late detection
Solution Approach 1:
The patent implements preliminary action by performing EBR size measurement immediately after the EBR process completes, rather than waiting until the end of all processes. This early detection enables timely feedback and correction, preventing time loss and quality deterioration while maintaining continuous process flow through automated in-line measurement.
Solution Approach 2:
The patent establishes a feedback mechanism where EBR size measurements are immediately fed back to the control system, enabling real-time monitoring and adjustment. This feedback loop allows the system to detect and correct EBR size deviations promptly, preventing downstream quality issues without interrupting the overall process flow.
3Device complexity
If manual monitoring of EBR size is used, then device complexity is minimized, but reliability deteriorates because proper processing is not performed until centering error is detected
Solution Approach 1:
The patent replaces simple manual monitoring with an automated optical measurement and control system. Although this increases device complexity, it dramatically improves reliability by continuously monitoring EBR size and wafer centering, enabling proactive correction of deviations before they cause quality failures or equipment damage.
Solution Approach 2:
The patent implements self-service through automated measurement and feedback control systems that continuously monitor and adjust EBR size and wafer centering without human intervention. This self-monitoring capability ensures consistent quality control and reliable detection of process deviations, eliminating the need for manual inspection while enhancing overall process reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables reliable and accurate monitoring of EBR size and wafer centering, reducing errors and improving the quality of semiconductor wafers by automating the correction process.
Implementation Method 1
a sensor for irradiating a laser beam onto a surface of the wafer
Implementation Method 2
a detector including a plurality of modules for detecting the laser beam reflected from the wafer
Data Source
AI summary
A semiconductor manufacturing apparatus and a wafer processing method are disclosed. The semiconductor manufacturing apparatus, comprises a rotatable device for supporting a wafer. A sensor for irradiating a laser beam onto a surface of the wafer and a detector including a plurality of modules for detecting the laser beam reflected from the wafer are also included. The sensor obtains information regarding the wafer, based on a change in the surface status of the wafer, which the modules sense when the laser beam is reflected from the wafer.