Wafer Layer Property Extraction Using Separated EM Pulses

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Solution Overview

Problem

Existing methods for measuring the properties of a wafer layer are inaccurate due to the influence of the electrical structure, leading to incorrect measurements of surface resistance.

Innovation Solution

A non-contact method using electromagnetic waves is employed to emit and detect waves passing through and reflected from the wafer layer, separating pulses to obtain transmission coefficients and exclude the influence of the wafer's electrical structure, allowing for accurate extraction of layer properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If electromagnetic waves are used to measure layer properties through the wafer, then non-contact measurement is achieved, but measurement precision deteriorates due to interference from the wafer's electrical structure

Engineering Contradiction:
Improvenon-contact measurementVSAvoidlayer property measurement accuracy
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The patent segments the measured signal into multiple pulses corresponding to different physical paths (direct transmission through wafer, reflection from layer, multiple bounces). By separating and analyzing each pulse individually, the system can isolate the layer's contribution from the wafer's electrical structure interference, thereby maintaining non-contact measurement while improving precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent extracts the specific signal component corresponding to the layer's reflection from the total electromagnetic signal by identifying and isolating the second pulse (which represents reflection from the layer interface). This extraction process removes the interfering components from the wafer's electrical structure, enabling accurate layer property measurement despite non-contact measurement constraints.

Inventive Principle:
Principle #2Taking out (Extraction)

2Device complexity

If the wafer is used as a reference signal for measurement, then measurement process is simplified, but measurement precision deteriorates due to electrical structure interference

Engineering Contradiction:
Improvemeasurement process complexityVSAvoidsurface resistance measurement accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent introduces an intermediary approach by using the wafer's transmission signal as a reference only for calibration purposes, not for direct measurement. The actual layer property measurement is performed by analyzing the reflected signal from the layer itself, which is less affected by the wafer's electrical structure. This intermediary method reduces complexity compared to eliminating the wafer entirely while maintaining measurement precision.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Accurately measures the properties of the wafer layer by excluding the influence of the wafer's electrical structure, providing precise data on surface resistance without using the wafer as a reference signal.

Implementation Method 1

emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer

Methodology Applied
Scientific EffectElectromagnetic wave transmission: Electromagnetic Induction

Implementation Method 2

detecting a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves

Methodology Applied
Scientific EffectElectromagnetic wave reflection: Reflection

Data Source

PatentUS12469750B2Method of extracting properties of a layer on a wafer
Publication Date: 2025.11.11 SAMSUNG ELECTRONICS CO LTD
  • US12469750B2 patent drawing
  • US12469750B2 patent drawing
  • US12469750B2 patent drawing

AI summary

Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.