Wafer-Level ESD Protection for Compact Optoelectronic Circuits
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Solution Overview
Problem
Existing protection systems for optoelectronic devices against electrostatic discharges (ESDs) are not feasible in devices like display pixels or image sensors due to size constraints, necessitating a cost-effective and scalable protection method.
Innovation Solution
A method involving the integration of an electrostatic discharge protection circuit in wafers, with conductive tracks electrically coupling electronic and optoelectronic components, followed by a cutting step to separate devices, ensuring protection without altering the device dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an electrostatic discharge protection system is included in each optoelectronic device, then the device is protected against ESDs, but the device dimensions increase beyond acceptable limits
Solution Approach 1:
The patent merges the protection function across multiple devices by implementing a shared protection circuit on the substrate that serves multiple optoelectronic devices simultaneously. Instead of each device having its own protection circuit, the protection function is consolidated into a common infrastructure that benefits all devices on the substrate, thereby maintaining small device dimensions while ensuring ESD protection.
Solution Approach 2:
The protection circuit is designed with universal applicability to serve multiple different optoelectronic devices on the same substrate. The same protection infrastructure can protect various types of devices (display pixels, image sensors, etc.) without requiring device-specific protection circuits, achieving both compact device size and comprehensive ESD protection through a multi-functional system.
2Reliability
If protection circuits are integrated in each device, then ESD protection is provided, but manufacturing cost and complexity increase
Solution Approach 1:
The patent combines multiple protection functions into a single integrated protection circuit on the substrate. This consolidation reduces the total number of protection circuits needed, simplifying the manufacturing process and reducing costs compared to implementing individual protection circuits in each optoelectronic device. The shared protection infrastructure can be manufactured using standard substrate fabrication processes.
3Length of moving object
If device dimensions are reduced to meet application requirements, then device integration is improved, but ESD protection becomes difficult to implement
Solution Approach 1:
The patent moves the protection function from the device level to the substrate level, effectively changing the spatial dimension at which protection is implemented. Instead of adding protection circuits within the constrained device footprint, the protection is implemented on the larger substrate that hosts multiple devices, allowing compact device dimensions while providing comprehensive ESD protection through the substrate-level protection infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Provides effective ESD protection for optoelectronic devices during manufacturing, maintaining device integrity and enabling industrial-scale, low-cost production.
Implementation Method 1
the conductive tracks are made of a metal or of a non-metal electrically-conductive material
Implementation Method 2
an electrostatic discharge protection circuit electrically coupled by electric links at least to the electronic components of a plurality of electronic circuits and/or to the optoelectronic components of a plurality of optoelectronic circuits
Data Source
AI summary
A method for protecting optoelectronic devices against electrostatic discharges. Each optoelectronic device includes an electronic circuit including at least one electronic component and one optoelectronic circuit bonded to the electronic circuit and including at last one optoelectronic component from among a light-emitting diode or a photodiode. The method includes forming of first and second wafers, one of the first or second wafer includes a plurality of copies of the electronic circuit and the other one of the first or second wafer including a plurality of copies of the optoelectronic circuit, the bonding of the first wafer to a support, the bonding of the second wafer to the first wafer, and the separation of the electronic devices from one another, wherein the first wafer and/or the second wafer comprises at least one system for protecting optoelectronic devices against electrostatic discharges.