Semiconductor Wafer Liquid Treatment with Local Temperature Control
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Solution Overview
Problem
Existing technologies for treating semiconductor wafers with etching liquids face challenges in rapidly adjusting the temperature, concentration, and quantity of the liquid to match varying conditions on the wafer surface, leading to uneven temperature distribution and impaired etching uniformity.
Innovation Solution
A method and device that allow for dynamic adjustment of the temperature and/or concentration and/or amount of the liquid applied to the semiconductor wafer during treatment, using inductive heating, Peltier elements for heating and cooling, and flow rate regulation to ensure precise control and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional heating devices are used to heat the etching liquid, then the liquid can be heated to the required temperature, but the temperature control is too slow to quickly change or regulate temperature during the process
Solution Approach 1:
The patent replaces conventional thermal heating devices with inductive heating technology. The inductive heating device generates an oscillating magnetic field that directly induces eddy currents in the etching liquid, converting electromagnetic energy directly into thermal energy within the liquid itself. This eliminates the slow heat transfer through walls and containers characteristic of conventional heating, achieving rapid temperature control and regulation during the etching process.
Solution Approach 2:
The inductive heating device operates by applying periodic oscillating magnetic fields to the etching liquid. The alternating current in the induction coil generates a time-varying magnetic field that induces periodic eddy currents in the conductive etching liquid, creating continuous cyclic heating effects. This periodic action allows for precise control of heating rate and temperature regulation by adjusting the frequency and amplitude of the oscillating field.
2Productivity
If the etching medium is applied at the beginning of the process, then the treatment can start, but the medium is colder than necessary and thermal equilibrium is only reached after some time
Solution Approach 1:
The system performs preliminary heating of the etching liquid using inductive heating before the liquid is applied to the semiconductor wafer. The induction heating device pre-heats the liquid to the required temperature in advance, so that when the liquid is dispensed onto the wafer surface, it is already at the optimal processing temperature, eliminating the temperature lag experienced in conventional systems.
Solution Approach 2:
The inductive heating device acts as an intermediary between the power source and the etching liquid, transferring energy through electromagnetic coupling rather than direct thermal contact. The oscillating magnetic field serves as the intermediary medium that transfers energy to the liquid, enabling rapid and controlled heating without physical contact between the heating element and the liquid, thus avoiding contamination while achieving precise temperature control.
3Temperature
If constant heating of the medium is maintained, then the required temperature can be sustained, but energy is wasted
Solution Approach 1:
The system incorporates temperature sensors that continuously monitor the temperature of the etching liquid and feed this information back to the control system. The controller compares the measured temperature with the setpoint temperature and adjusts the inductive heating power accordingly, increasing heating when temperature drops and reducing or stopping heating when the target temperature is reached. This closed-loop feedback control maintains temperature stability while minimizing energy consumption by avoiding unnecessary continuous heating.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves improved uniformity of the treatment result, reduces rejects, conserves energy by eliminating the need for constant heating, and enables the treatment of smaller structures with enhanced precision.
Implementation Method 1
heating the liquid medium to be applied to the surface to be treated by inductive heating
Implementation Method 2
heating the liquid medium to be applied to the surface to be treated by inductive heating
Implementation Method 3
cooling the liquid medium to be applied to the surface to be treated by Peltier elements
Data Source
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AI summary
In the treatment of a semiconductor wafer (8), a treatment medium, in particular an etching or cleaning liquid, is applied to the semiconductor wafer (8) from a nozzle (11). In this process, the temperature, the concentration and/or the amount of medium applied in the unit of time are controlled depending on the location (7) at which the medium is being applied to the semiconductor wafer (8). In this manner, uniform treatment of the semiconductor water (8) is achieved because irregularities in the semiconductor wafer (8) can be compensated.