Wafer Micro Roughness Measurement via Light Scattering

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Solution Overview

Problem

Current methods for measuring micro roughness on semiconductor wafers, such as using atomic force microscopes, are time-consuming and do not account for variations in material and film thickness, which affect light scattering intensity and require calibration to match results with different measurement principles.

Innovation Solution

A surface shape measurement apparatus using a light scattering method that rotates and translates wafers at high speed, estimating micro roughness from total signals and signal ratios, and includes a calibration function to correct optical detection results using a similar sample, allowing for high-throughput measurement of entire wafer surfaces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If atomic force microscope (AFM) is used for height measurement to obtain accurate micro roughness data, then measurement precision is improved, but measurement time increases significantly

Engineering Contradiction:
Improvemicro roughness measurement accuracyVSAvoidmeasurement time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces the mechanical contact-based AFM measurement system with an optical light scattering measurement system. The light scattering apparatus uses optical fields instead of mechanical probes to measure micro roughness, enabling non-contact, high-speed measurement while maintaining measurement capability. This substitution resolves the contradiction by eliminating the time-consuming mechanical scanning process while preserving the ability to obtain micro roughness data.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the measurement parameter approach by measuring light scattering intensity and its variations instead of directly measuring height profiles. By detecting changes in light scattering properties (intensity, angular distribution) caused by surface micro roughness, the system obtains measurement data through optical parameter changes rather than mechanical displacement, achieving both speed and accuracy.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If light scattering method is used for high speed measurement, then productivity is improved, but measurement precision deteriorates due to inability to account for material and film thickness variations

Engineering Contradiction:
Improvemeasurement throughputVSAvoidmicro roughness measurement accuracy
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The patent implements a feedback mechanism where the measured light scattering intensity is used to determine film thickness, and this determined film thickness information is fed back to correct the micro roughness calculation. The system continuously adjusts the measurement interpretation based on the actual film conditions, ensuring accurate micro roughness values even when material or film thickness varies, thus maintaining precision while achieving high throughput.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent performs preliminary determination of film thickness from the light scattering intensity before using this information to correct the micro roughness measurement. By establishing the film thickness condition in advance, the system can apply the appropriate correction factors to the roughness calculation, ensuring accuracy is maintained throughout the high-speed measurement process without requiring repeated measurements.

Inventive Principle:
Principle #10Preliminary action

3Measurement precision

If calibration is performed to match optical measurement results with AFM results, then measurement precision is improved, but device complexity increases

Engineering Contradiction:
Improveoptical measurement accuracyVSAvoidcalibration system complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent uses parameter changes in the correction coefficient to account for different material types and film thickness conditions. Instead of creating complex calibration procedures for each condition, the system adjusts the correction coefficient based on the detected film thickness and material properties, simplifying the calibration process while maintaining measurement precision across varying conditions.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables rapid acquisition of necessary information for wafer process management by estimating micro roughness and surface roughness quickly and accurately, correcting optical measurements to align with atomic force microscope results.

Implementation Method 1

measuring a surface shape using a light scattering method

Methodology Applied
Scientific EffectLight scattering: Scattering

Data Source

PatentUS9823065B2Surface measurement apparatus
Publication Date: 2017.11.21 HITACHI HIGH TECH CORP
  • US9823065B2 patent drawing
  • US9823065B2 patent drawing
  • US9823065B2 patent drawing

AI summary

The invention discloses a technique that estimates micro roughness from a total sum of detection signals from plural detection systems and signal ratios, using a light scattering method. The technique rotates and translates a wafer at high speed to measure the entire surface of the wafer with high throughput. The relationship between the micro roughness and the intensity of scattered light varies according to a material of the wafer and a film thickness thereof. Moreover, calibration of an apparatus is also necessary. Thus, for instance, the invention provides a technique that has a function of correcting an optically acquired detection result using a sample which is substantially the same as a measurement target and makes the optically acquired detection result come close to a result measured by an apparatus, such as an AFM, using a different measurement principle.