Wafer-Level Package Hybrid Bonding With Redistribution Encapsulation

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Solution Overview

Problem

The integration of multiple semiconductor devices in wafer level packaging poses challenges in existing technologies, particularly in achieving efficient electrical connections and structural integrity during the manufacturing process.

Innovation Solution

A hybrid bonding process is employed, where semiconductor dies are bonded to a wafer substrate using a bonding layer with aligned bonding pads, followed by thermal treatments to enhance bonding strength, and a redistribution structure is formed to facilitate electrical connections, with specific etching processes to create openings for encapsulation and protection layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple semiconductor devices are integrated in wafer level packaging, then device functionality and integration density are improved, but manufacturing complexity and process difficulty increase

Engineering Contradiction:

Improveintegration of multiple semiconductor devicesVSAvoidmanufacturing process complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The manufacturing process is divided into distinct stages: wafer-level bonding of multiple devices, singulation to separate individual packages, and post-singulation testing. This segmentation allows each stage to be optimized independently, managing complexity while achieving high integration

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Multiple semiconductor devices are bonded to the substrate at the wafer level before singulation. This preliminary integration action enables complex multi-device configurations to be established early, reducing subsequent manufacturing steps and overall process complexity

Inventive Principle:

Principle #10Preliminary action

2Reliability

If hybrid bonding process with thermal treatments is used, then bonding strength and electrical connections are improved, but manufacturing time and energy consumption increase

Engineering Contradiction:

Improvebonding strengthVSAvoidmanufacturing time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

Thermal treatments are applied at specific temperature parameters to enhance bonding strength during the hybrid bonding process. By optimizing temperature profiles and treatment durations, strong reliable bonds are achieved while minimizing unnecessary time consumption

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The hybrid bonding approach combines different bonding mechanisms (e.g., direct bonding with metallization layers) that work synergistically. This composite bonding strategy achieves superior bonding strength and electrical connectivity more efficiently than single-method approaches

Inventive Principle:

Principle #40Composite materials

3Manufacturing precision

If redistribution structure and etching processes are employed, then electrical connections and structural integrity are improved, but manufacturing steps and cost increase

Engineering Contradiction:

Improveelectrical connectionsVSAvoidmanufacturing cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

Redistribution structures are formed with localized metallization patterns that provide precise electrical connections only where needed. Etching processes create targeted openings for encapsulation and bonding. This local precision approach achieves high manufacturing precision without unnecessary material usage or process steps

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The redistribution structure acts as an intermediary layer between the bonded semiconductor devices and external connections. It provides both mechanical support and electrical routing functions, consolidating multiple functions into a single structure that reduces overall manufacturing complexity and cost

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method ensures robust electrical connections and structural integrity, enabling efficient integration of semiconductor devices while reducing manufacturing costs and improving yield through verification testing structures.

Implementation Method 1

followed by thermal treatments to enhance bonding strength

Methodology Applied

Scientific EffectThermal treatment: Heat Treatment

Data Source

PatentUS12557698B2Package and manufacturing method thereof

Publication Date: 2026.02.17 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A manufacturing method of a package is provided. The method includes the following steps. A wafer substrate having first bonding pads is provided. A die is placed on the wafer substrate, wherein the die comprises second bonding pads bonded to the first bonding pads. The die is encapsulated by an etch stop layer and a first encapsulant. A redistribution structure is disposed over the die, the etch stop layer and the first encapsulant. A portion of the redistribution structure is removed to expose the first encapsulant. The first encapsulant is removed to expose the etch stop layer. A dielectric structure is disposed over the exposed etch stop layer and laterally encapsulates the die and the redistribution structure.