Wafer Package Metal Density Layout for Bonding and Inductor RLC
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Solution Overview
Problem
Integration of multiple semiconductor devices in wafer-level packaging poses challenges due to complexities in interconnection and bonding processes, leading to inefficiencies in manufacturing and increased costs.
Innovation Solution
The implementation of a hybrid bonding process with a wafer substrate and die, utilizing a dual damascene process to form bonding vias and pads with varying pattern densities, and the use of a redistribution structure to alleviate RLC performance degradation by strategically placing an inductor in a region with lower metal density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor devices are integrated in wafer-level packaging, then device integration is improved, but manufacturing complexity increases
Solution Approach 1:
The wafer substrate is divided into multiple regions with different metal densities, allowing different functional areas to be optimized independently. This segmentation enables complex multi-device integration while managing manufacturing complexity through regional specialization rather than uniform complex structures across the entire wafer.
Solution Approach 2:
Different regions of the wafer substrate are assigned different metal densities tailored to their specific functional requirements. This local quality approach allows each region to have optimized characteristics for its intended use, improving overall device integration while avoiding the need for uniformly high complexity across the entire manufacturing process.
2Strength
If metal density is increased to improve bonding strength, then bonding strength is improved, but RLC performance degrades due to increased metal overlap
Solution Approach 1:
The patent implements varying metal densities in different regions of the wafer substrate. Regions requiring strong bonding have higher metal density, while regions where RLC performance is critical have lower metal density. This local differentiation allows each region to have optimized characteristics for its specific function without compromising the other.
Solution Approach 2:
The patent resolves the contradiction by transitioning from a uniform metal density approach to a spatially varying metal density distribution across the wafer substrate. This dimensional change in metal density organization allows simultaneous optimization of bonding strength in certain areas and RLC performance in other areas.
3Ease of manufacture
If uniform metal density is used across the wafer, then manufacturing simplicity is maintained, but inductor performance degrades due to metal overlap
Solution Approach 1:
The patent implements varying metal densities in different regions of the wafer substrate, allowing different functional areas to be optimized independently. This segmentation enables complex multi-device integration while managing manufacturing complexity through regional specialization rather than uniform complex structures across the entire wafer.
4Strength
If higher metal density is used to improve bonding strength, then bonding strength is improved, but manufacturing cost increases
Solution Approach 1:
The patent implements varying metal densities in different regions of the wafer substrate, allowing different functional areas to be optimized independently. This segmentation enables complex multi-device integration while managing manufacturing complexity through regional specialization rather than uniform complex structures across the entire wafer.
Data Source
AI summary
A package has a first region and a second region encircled by the first region. The package includes a first die, a second die, an encapsulant, and an inductor. The first die is located in both the first region and the second region. The second die is bonded to the first die and is completely located within the first region. The encapsulant laterally encapsulates the second die. The encapsulant is located in both the first region and the second region. The inductor is completely located within the second region. A metal density in the first region is greater than a metal density in the second region.