Semiconductor Wafer Pattern Symmetry to Reduce Cleavage Chipping

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Solution Overview

Problem

The scribing and breaking method for dividing semiconductor wafers can result in chipping, where a part of the chip breaks off during the division process, leading to defects in semiconductor devices.

Innovation Solution

A semiconductor device with a pattern structure having a protruding shape is formed on the semiconductor substrate, where the pattern structure is symmetrical within predetermined distances from the cleavage planes. This configuration ensures a uniform load is applied during the division process, reducing the likelihood of chipping.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the scribing and breaking method is used to divide semiconductor wafers, then the number of semiconductor devices that can be produced from the semiconductor wafer increases and manufacturing cost is reduced, but chipping occurs where a part of the chip breaks off during the division process

Engineering Contradiction:
Improvenumber of semiconductor devices producedVSAvoidchip integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by forming weakened portions (scribed lines) along the boundaries between adjacent element regions before the dividing process. This pre-weakening allows the semiconductor wafer to cleave cleanly along predetermined paths when pressure is applied, preventing random chipping during division while maintaining high productivity through the scribing and breaking method

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If the scribing and breaking method is used to divide semiconductor wafers, then manufacturing cost is reduced, but chipping occurs where a part of the chip breaks off during the division process

Engineering Contradiction:
Improvemanufacturing costVSAvoidchip integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent forms weakened portions along boundaries before division, enabling clean cleavage that prevents chipping. This preliminary structuring allows the use of simple breaking mechanisms rather than complex precision cutting equipment, maintaining low manufacturing cost while improving chip integrity through controlled fracture paths

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent modifies the physical state of the semiconductor material along scribe lines by creating weakened portions with different mechanical properties. These modified regions have reduced strength and increased susceptibility to cleavage, allowing the bulk material to remain intact while enabling controlled division at specific locations without chipping

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The symmetrical pattern structure effectively restricts the occurrence of chipping during the division of semiconductor wafers, resulting in higher yields of functional semiconductor devices and reduced manufacturing costs.

Implementation Method 1

the semiconductor wafer is divided by cleaving starting from the weakened portions

Methodology Applied
Scientific EffectCleavage: Fracture Mechanics

Data Source

PatentUS20250054875A1Semiconductor device and manufacturing method of semiconductor device
Publication Date: 2025.02.13 DENSO CORP
  • US20250054875A1 patent drawing
  • US20250054875A1 patent drawing
  • US20250054875A1 patent drawing

AI summary

A semiconductor device includes a semiconductor substrate having first and second main surfaces, first and second side surfaces opposite to each other in a first direction, and third and fourth side surfaces opposite to each other in a second direction perpendicular to the first direction, and a pattern structure disposed on the first main surface. The pattern structure within a first predetermined distance from the first side surface along the first direction and the pattern structure within the first predetermined distance from the second side surface along the first direction are symmetrical with respect to a line extending in the second direction. The pattern structure within a second predetermined distance from the third side surface along the second direction and the pattern structure within the second predetermined distance from the fourth side surface along the second direction are symmetrical with respect to a line extending in the first direction.