Wafer Peripheral Peeling Using Laser-Formed Separation Layers

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Solution Overview

Problem

Current semiconductor manufacturing processes face challenges in efficiently processing substrates during bonding, particularly in trimming or grinding, where existing methods result in excessive powder generation and potential damage to wafers due to mechanical trimming or incomplete polishing.

Innovation Solution

A semiconductor manufacturing apparatus that forms a reformed layer and a peeling layer between portions of a substrate, using lasers to create a thermal stress difference for precise separation and peeling of the outer peripheral portion from the central portion, allowing for efficient removal without generating excessive powder.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If mechanical trimming or grinding is used to process substrates during bonding, then substrate size can be reduced, but excessive powder is generated and wafer damage occurs

Engineering Contradiction:

Improvesubstrate processing precisionVSAvoidpowder generation and wafer damage

Core Design Contradiction:

Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent replaces mechanical trimming or grinding with a laser-based thermal processing system. The laser heats the substrate to form a reformed layer, which then enables clean separation through thermal stress and peeling mechanisms, eliminating the need for mechanical contact that generates powder and causes damage.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent utilizes phase transitions in the substrate material by heating it with a laser to form a reformed layer. This thermal processing causes localized phase changes that facilitate clean separation of the substrate into central and outer peripheral portions without mechanical degradation.

Inventive Principle:

Principle #36Phase transitions

2Manufacturing precision

If laser heating is used to form reformed layer and peeling layer, then precise separation is achieved, but energy consumption increases

Engineering Contradiction:

Improveseparation precisionVSAvoidlaser energy consumption

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The laser heating is applied locally only to the outer peripheral portion of the substrate that needs to be separated, rather than heating the entire substrate. This localized thermal processing achieves precise separation while minimizing overall energy consumption by concentrating energy only where needed.

Inventive Principle:

Principle #3Local quality

3Productivity

If outer peripheral portion is removed from substrate, then processing efficiency is improved, but substrate structure is altered

Engineering Contradiction:

Improveprocessing efficiencyVSAvoidsubstrate structure integrity

Core Design Contradiction:

ProductivityVSStability of the object's composition

Solution Approach 1:

The patent forms a reformed layer and peeling layer in advance through controlled laser heating before separation occurs. This preliminary thermal processing creates a structured interface that enables clean separation while preserving the integrity and structural stability of the remaining central substrate portion.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise and efficient removal of the outer peripheral portion from the substrate, reducing powder generation and minimizing damage, while maintaining the central portion on the substrate, thus improving processing efficiency and reducing post-processing cleanup efforts.

Implementation Method 1

a heater configured to heat the first portion or the second portion, to peel the second portion from the second substrate at the peeling layer and divide the first portion and the second portion from each other

Methodology Applied

Scientific EffectThermal stress: Thermal Expansion

Implementation Method 2

using lasers to create a thermal stress difference for precise separation and peeling of the outer peripheral portion from the central portion

Methodology Applied

Scientific EffectThermal stress: Thermal Expansion

Data Source

PatentUS20230076961A1Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Publication Date: 2023.03.09 KIOXIA CORP

AI summary

In one embodiment, a semiconductor manufacturing apparatus includes a reformed layer former configured to partially reform a first substrate to form a reformed layer between first and second portions in the first substrate, a peeling layer former configured to form a peeling layer between the second portion and a second substrate provided on the first substrate, and a remover configured to remove the second portion from the second substrate while causing the first portion to remain on the second substrate. The remover includes a heater to heat the first or second portion, to peel the second portion from the second substrate at the peeling layer and divide the first and second portions from each other, and a mover to move the second substrate relative to the second portion, to remove the second portion from the second substrate while causing the first portion to remain on the second substrate.