Wafer-Level Photonic-Electronic Stacking for Shorter Interconnects
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Solution Overview
Problem
Existing optic device structures face challenges with increased power consumption and heat generation due to long lead wires connecting optical engines and switches, which are separately mounted on substrates, hindering bandwidth density and efficiency improvements.
Innovation Solution
A wafer-level stack structure is implemented where electronic ICs, photonic ICs, and high-performance computing ICs are vertically aligned and bonded without separate cutting into dies, reducing wire connections and integrating them at the wafer level to form optical engines, with heat dissipation features like deep optical signal openings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If optical engines and switches are separately mounted on substrates and connected by long lead wires, then device assembly is simplified, but power consumption increases and heat generation increases
Solution Approach 1:
The patent merges the optical engine and switch onto a single substrate, eliminating the need for long lead wires connecting separate components. This integration directly reduces power consumption and heat generation while maintaining manufacturing feasibility through co-packaging technology.
Solution Approach 2:
The patent transitions from a planar arrangement with long lead wires to a three-dimensional stacked architecture where optical engines and switches are vertically integrated. This dimensional change dramatically shortens connection paths, reducing resistance and associated power losses.
2Ease of manufacture
If optical engines and switches are separately mounted on substrates and connected by long lead wires, then device assembly is simplified, but heat generation increases
Solution Approach 1:
The patent merges the optical engine and switch onto a single substrate, eliminating the need for long lead wires connecting separate components. This integration directly reduces power consumption and heat generation while maintaining manufacturing feasibility through co-packaging technology.
Solution Approach 2:
The patent addresses heat generation by integrating components to minimize resistive heating from lead wires, and by strategically positioning heat-generating elements near heat dissipation structures, converting potential thermal problems into manageable thermal design opportunities.
3Productivity
If miniaturization continues to meet bandwidth density demand, then bandwidth density increases, but power consumption and heat generation continue to pose challenges
Solution Approach 1:
The patent transitions from a planar arrangement with long lead wires to a three-dimensional stacked architecture where optical engines and switches are vertically integrated. This dimensional change dramatically shortens connection paths, reducing resistance and associated power losses while enabling higher bandwidth density.
Solution Approach 2:
The patent merges the optical engine and switch onto a single substrate, eliminating the need for long lead wires connecting separate components. This integration directly reduces power consumption and heat generation while maintaining manufacturing feasibility through co-packaging technology.
4Productivity
If miniaturization continues to meet bandwidth density demand, then bandwidth density increases, but heat generation continues to pose challenges
Solution Approach 1:
The patent transitions from a planar arrangement with long lead wires to a three-dimensional stacked architecture where optical engines and switches are vertically integrated. This dimensional change dramatically shortens connection paths, reducing resistance and associated power losses.
Solution Approach 2:
The patent addresses heat generation by integrating components to minimize resistive heating from lead wires, and by strategically positioning heat-generating elements near heat dissipation structures, converting potential thermal problems into manageable thermal design opportunities.
Data Source
AI summary
Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a first wafer including a plurality of electronic integrated circuits (EICs), forming a second wafer including a plurality of photonic integrated circuits (PICs), bonding the first wafer to the second wafer to form a first stacked wafer. The bonding of the first wafer to the second wafer includes vertically aligning each of the plurality of the EICs with one of the plurality of the PICS.


