Simultaneous Wafer Front and Backside Plasma Cleaning
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Solution Overview
Problem
Current semiconductor wafer cleaning techniques are inefficient and prone to contamination as they require separate processing chambers for front and backside cleaning, leading to time-consuming processes and potential damage to the wafer, which ultimately reduces production yield.
Innovation Solution
A method and apparatus that utilize a reaction chamber with a platen in a downward position to create a gap, allowing a plasma to simultaneously clean both the front and backside of a semiconductor wafer within the same processing chamber, eliminating the need for a separate etch or strip system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate processing chambers are used for front and backside cleaning, then cleaning can be performed on both sides of the wafer, but the process becomes time-consuming and increases the risk of contamination
Solution Approach 1:
The patent combines the front side and backside cleaning operations into a single processing chamber. The wafer is positioned with both sides accessible to the plasma source, allowing simultaneous cleaning of both surfaces without requiring transfer between chambers, thereby reducing contamination risk and process time.
Solution Approach 2:
The patent introduces a vertical dimension to the cleaning process by positioning the wafer at an angle or vertically such that plasma can access both the front and back sides simultaneously within a single chamber volume, eliminating the need for sequential processing in separate chambers.
2Reliability
If separate etch or strip systems are used for backside cleaning, then thorough cleaning can be achieved, but device complexity increases
Solution Approach 1:
The processing chamber is designed to perform multiple functions: front side cleaning, backside cleaning, and simultaneous dual-side cleaning. The plasma generation system and wafer positioning mechanism are configured to accommodate both cleaning operations within a single universal chamber, eliminating the need for separate dedicated systems.
3Ease of operation
If physical contact handling is used for wafer transfer, then wafer can be moved between processing steps, but contamination and damage risk increases
Solution Approach 1:
The patent replaces mechanical contact-based wafer transfer with a plasma-based in-situ cleaning process. The wafer remains in the same chamber throughout the cleaning process, and plasma acts as a non-contact cleaning medium that removes contaminants without requiring physical handling or transfer operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and economical simultaneous cleaning of both sides of the wafer, reducing contamination risks and increasing production yield by minimizing physical contact and the need for additional processing steps.
Implementation Method 1
A plasma is generated and flows over the processing station and into the gap to contact both a front side and a backside of the substrate for simultaneously removing at least a portion of material from both the front side and the backside of such substrate
Data Source
AI summary
A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable the simultaneous removal of material from the wafer front side, backside and edges. The apparatus may include a single processing station having the gap residing therein, or the apparatus may include a plurality of processing stations, each capable of forming the gap therein for simultaneously removing additional material from the wafer front side, backside and edges.