Semiconductor Wafer Plasma Thinning and Scribe Lane Separation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The demand for thinner semiconductor chips to accommodate smaller electronic products necessitates improved methods for separating semiconductor chips from wafers, as conventional methods are inadequate for achieving the required thickness reduction.
Innovation Solution
A method involving grinding the substrate to reduce thickness, forming a protective coating layer, plasma-thinning the rear surface, and plasma-sawing the scribe lane region on the front surface, all performed in-situ within the same chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional methods are used to separate semiconductor chips from wafers, then the manufacturing process is simple, but the chip thickness cannot be sufficiently reduced
Solution Approach 1:
The separation process is divided into two distinct stages: first, a through-cut is made along the scribe lane to separate individual chip regions; second, a plasma process removes material from the rear surface to achieve the final thin thickness. This segmentation allows each stage to optimize for its specific function, enabling ultra-thin chips while maintaining manufacturing feasibility
Solution Approach 2:
The patent replaces conventional mechanical thinning methods with a plasma-based material removal process. The plasma process chemically etches the rear surface of the substrate, enabling precise thickness control and ultra-thin chip formation without the mechanical stress and limitations of traditional grinding or polishing methods
2Length of moving object
If chip thickness is reduced, then smaller electronic products can be developed, but conventional separation methods become inadequate
Solution Approach 1:
The patent replaces mechanical separation and thinning methods with plasma-based processes. The plasma chemistry provides controlled, stress-free material removal that maintains substrate integrity even at ultra-thin dimensions, thereby improving reliability while achieving the required thickness reduction
Solution Approach 2:
The through-cut is performed first along the scribe lane to pre-separate the chip regions before the plasma thinning process. This preliminary action defines the chip boundaries and prevents edge damage during subsequent plasma processing, ensuring reliable separation and chip integrity at reduced thickness
3Productivity
If plasma-thinning and plasma-sawing are performed in separate chambers, then process control is simpler, but manufacturing cost and time increase
Solution Approach 1:
The patent combines the plasma-thinning and plasma-sawing processes into a single chamber, allowing both operations to be performed sequentially without transferring the substrate between chambers. This merging eliminates transfer time, reduces handling steps, and improves overall manufacturing efficiency while the chamber is configured to accommodate both process types
4Manufacturing precision
If multiple processing steps are performed, then chip thickness and separation quality improve, but manufacturing cost increases
Solution Approach 1:
By combining plasma-thinning and plasma-sawing in a single chamber, the patent reduces the total number of processing steps and eliminates substrate transfers between chambers. This integration maintains the precision benefits of multiple process steps while reducing manufacturing cost through improved process efficiency and reduced equipment utilization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the efficient and cost-effective production of highly reliable semiconductor chips by reducing manufacturing costs and improving process control, while also simplifying the manufacturing process.
Implementation Method 1
plasma-thinning the substrate
Implementation Method 2
plasma-thinning the rear surface of the substrate
Implementation Method 3
plasma-sawing the scribe lane region of the substrate
Implementation Method 4
plasma-sawing the scribe lane region on the front surface of the substrate
Data Source
AI summary
A method of manufacturing a semiconductor chip includes grinding a substrate that includes a device region and a scribe lane region, forming a protective coating layer on the substrate, plasma-thinning the substrate, and plasma-sawing the scribe lane region of the substrate. The plasma-thinning of the substrate and the plasma-sawing of the scribe lane region of the substrate are performed in-situ in a same chamber.