Wafer Plating Solvent Supply for Temperature Uniformity
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Solution Overview
Problem
In single-wafer type plating apparatuses, achieving uniform temperature across the wafer surface is challenging due to space constraints, leading to insufficient heating of the wafer's peripheral regions and potential non-uniformity in the thickness of the plating film.
Innovation Solution
A plating apparatus and method that includes a solvent supply unit providing a solvent at a different temperature from the plating liquid to specific positions on the substrate, allowing for uniform temperature distribution across the wafer surface by heating the peripheral regions more intensely than the central regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If temperature control device is provided to directly heat the wafer at the front surface side or the rear surface side, then the temperature uniformity across the wafer surface is improved, but the device complexity and space requirements increase
Solution Approach 1:
The patent introduces a temperature control liquid as an intermediary substance to transfer thermal energy to the wafer. Instead of direct contact heating devices, the temperature control liquid circulates between the heating device and the wafer surface, mediating the heat transfer process. This resolves the contradiction by achieving temperature control without adding complex direct heating devices to the wafer surface.
Solution Approach 2:
The patent employs a liquid-based temperature control system where temperature control liquid is supplied to the wafer surface through nozzles and removed via suction. This hydraulic approach enables flexible temperature control without mechanical contact, avoiding the need for complex heating devices attached to the wafer surface.
2Temperature
If temperature-controlled processing chemical liquid is supplied to the wafer, then the central portion of the wafer can be heated, but the peripheral portion cannot be heated sufficiently leading to non-uniform plating film thickness
Solution Approach 1:
The patent implements local quality control by selectively supplying temperature control liquid to different regions of the wafer surface. The supply positions and suction positions are strategically located to create localized heating zones, allowing the peripheral portions to receive sufficient heat while the central portion maintains appropriate temperature. This resolves the non-uniform heating issue by making temperature distribution spatially differentiated.
Solution Approach 2:
The patent divides the wafer surface into multiple temperature control zones by positioning multiple nozzles and suction devices at different locations. This segmentation allows independent temperature control of different regions, enabling the peripheral portions to be heated sufficiently while preventing overheating of the central portion, thus achieving uniform plating film thickness.
3Ease of operation
If rotating device and chemical liquid supply device are provided at the rear surface side and front surface side of the wafer, then the plating process can be performed, but sufficient space is difficult to secure making direct temperature control difficult
Solution Approach 1:
The patent replaces space-intensive mechanical temperature control devices with a liquid-based temperature control system. Temperature control liquid is supplied through nozzles and removed via suction devices that can be positioned in the limited available space. This hydraulic approach achieves temperature control without requiring the installation of bulky heating devices in the constrained space between the wafer and the processing chamber.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures a uniform temperature across the wafer surface, thereby achieving uniform thickness of the plating film without increasing the consumption of the plating liquid and without affecting the plating process.
Implementation Method 1
a solvent supply unit configured to supply a solvent constituting the plating liquid and having a different temperature from a temperature of the plating liquid to the substrate
Data Source
AI summary
A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.