Wafer-Level Polarization Imaging for Real-Time 3D Sensing
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Solution Overview
Problem
Conventional imaging systems are inadequate for generating 3D images or angle representations in real-time, especially in incoherent electromagnetic environments or turbid media, such as mist, fog, or smoke.
Innovation Solution
A spatial phase integrated wafer-level imaging system that incorporates a polarization structure over or within pixel/photodiodes, utilizing metal-wire grid polarization, meta-materials, or subwavelength structures to enhance polarization contrast and efficiency, and performs analog processing to reduce noise and improve signal-to-noise ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional intensity-based imaging techniques are used, then the system is simple and easy to manufacture, but it cannot generate 3D images or angle representations in real-time and fails in incoherent electromagnetic environments or turbid media
Solution Approach 1:
The patent embeds multiple functional layers within a single integrated sensor device. The polarization structure is integrated directly over the pixel array, and analog processing circuits are embedded within the same device, creating a nested architecture that provides advanced functionality without proportionally increasing external complexity
Solution Approach 2:
The patent combines polarization sensitivity, spatial phase detection, and analog processing capabilities into a single integrated sensor device. This merging of functions allows the system to achieve 3D imaging and environmental adaptability while maintaining a compact form factor
2Measurement precision
If conventional imaging systems are used, then the device complexity is low, but the measurement precision and information quality are insufficient for 3D imaging and material characterization
Solution Approach 1:
The patent implements polarization structures at the local pixel level, where each pixel or group of pixels has its own polarization sensitivity. This local implementation of polarization detection enables precise measurement of polarization states without requiring complex global processing systems
Solution Approach 2:
The patent adds polarization dimension to conventional intensity-based imaging. By detecting not only the intensity but also the polarization state of light at each pixel, the system extracts additional information dimensions that enable 3D imaging and material characterization without requiring multiple physical cameras
3Measurement precision
If polarization structures are integrated over pixels, then polarization contrast and efficiency are enhanced, but the manufacturing complexity increases
Solution Approach 1:
The patent utilizes standard semiconductor fabrication parameters and materials that are compatible with existing wafer-level manufacturing processes. The polarization structures are formed using deposition and etching techniques that are already established in the industry, allowing integration without requiring fundamentally new manufacturing capabilities
Solution Approach 2:
The patent employs photolithography patterns to define the polarization structures, using light-based copying processes that are standard in semiconductor manufacturing. This approach allows precise replication of polarization element geometries across the entire wafer surface using established copying techniques
4Reliability
If analog processing is performed to reduce noise, then the signal-to-noise ratio improves, but the device complexity and processing requirements increase
Solution Approach 1:
The patent implements analog processing circuits that are self-contained within the sensor device, performing noise reduction and signal processing functions locally at the pixel level. This self-service approach eliminates the need for complex external processing systems while improving signal quality
Solution Approach 2:
The patent divides the processing function into segments that are distributed across the sensor array, with each pixel or pixel group having its own analog processing circuitry. This segmentation allows parallel processing of multiple signals simultaneously, reducing the overall processing burden and complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-resolution, real-time 3D imaging and scene analysis in various distances and environments, providing additional information like polarization states, material types, and surface characteristics, even in challenging conditions.
Implementation Method 1
Each pixel of the array of pixels is sensitive to spatial phase and orientations of electromagnetic radiation incident upon the array of pixels
Data Source
AI summary
In a general aspect, integrated spatial phase wafer-level imaging is described. In some aspects, an integrated imaging system an integrated image sensor and an edge processor. The integrated image sensor may include: a polarizer pixel configured to filter electromagnetic (EM) radiation and to allow filtered EM radiation having a selected polarization state to pass therethrough; a radiation-sensing pixel configured to detect the filtered EM radiation and to generate a signal in response to detecting the filtered EM radiation; and readout circuitry configured to perform analog preprocessing on the signal generated by the radiation-sensing pixel. The edge processor may be configured to: generate first-order primitives and second-order primitives based on the analog preprocessed signal from the readout circuitry; and determine a plurality of features of an object located in a field-of-view of the radiation-sensing pixel based on the first-order primitives and the second-order primitives.