Semiconductor Wafer Polishing Conditions from Temperature Correlation
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Solution Overview
Problem
The semiconductor wafer manufacturing process requires determining polishing conditions, which typically involves numerous trials and errors due to the complexity of polishing parameters.
Innovation Solution
A method is developed to create a correlation relational formula by measuring in-plane polishing and temperature distribution information under various polishing conditions, using heat transfer analysis and correlation analysis to determine optimal polishing parameters such as time, pressure, and rotation speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If numerous trials and errors are performed to determine polishing conditions, then the polishing parameters can be optimized, but the time and productivity are significantly reduced
Solution Approach 1:
The patent performs preliminary measurements of in-plane temperature distribution and in-plane polishing amount distribution under various polishing conditions before final polishing. These preliminary actions create a database that is used to create correlation relational formulas, allowing the optimal polishing condition to be determined without extensive trials and errors during actual production, thus resolving the contradiction between precision and productivity
Solution Approach 2:
The patent creates correlation relational formulas that copy the relationship between polishing parameters and outcomes (temperature distribution, polishing amount distribution). These formulas serve as mathematical models that replicate the effects of numerous trials and errors, enabling rapid determination of optimal polishing conditions without actually performing all the trials, thereby improving productivity while maintaining precision
2Manufacturing precision
If multiple polishing parameters are adjusted to achieve optimal results, then the polishing quality is improved, but the complexity of the determination process increases
Solution Approach 1:
The patent segments the complex determination process into distinct measurement components: in-plane temperature distribution measurement and in-plane polishing amount distribution measurement. Each component is measured separately under various polishing conditions, and correlation relational formulas are created for each. This segmentation simplifies the overall complexity while maintaining the ability to optimize multiple polishing parameters for high polishing quality
Solution Approach 2:
The patent systematically changes polishing parameters (polishing time, polishing pressure, rotation speed) and measures the corresponding changes in temperature distribution and polishing amount distribution. By creating correlation relational formulas that express these parameter changes, the patent simplifies the complex multi-parameter optimization problem into manageable mathematical relationships, reducing determination process complexity while achieving optimal polishing uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the determination of polishing conditions without extensive trial-and-error processes, ensuring high accuracy and efficiency in semiconductor wafer polishing.
Implementation Method 1
creating in-plane temperature distribution information during semiconductor wafer polishing under polishing conditions including a plurality of polishing parameters by heat transfer analysis
Implementation Method 2
heat transfer analysis
Implementation Method 3
polishing semiconductor wafers under a plurality of polishing conditions
Data Source
AI summary
A method of creating a correlation relational formula for determining a polishing condition, the method including polishing semiconductor wafers under a plurality of polishing conditions including a plurality of polishing parameters, and acquiring, by actual measurement, in-plane polishing amount distribution information on the semiconductor wafers in polishing under the plurality of polishing conditions; polishing semiconductor wafers under a plurality of polishing conditions including a plurality of polishing parameters, and acquiring, by actual measurement, in-plane temperature distribution information during semiconductor wafer polishing in polishing under the plurality of polishing conditions, or creating in-plane temperature distribution information during semiconductor wafer polishing under polishing conditions including a plurality of polishing parameters by heat transfer analysis, and correlating relational formulas between a semiconductor wafer in-plane temperature distribution parameter and a plurality of polishing parameters.