Wafer Position Correction Using Etch Rate Distribution Center

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Solution Overview

Problem

The existing manual method for correcting the position of a wafer in semiconductor chip manufacturing is prone to human error and takes a long time, leading to inefficiencies and decreased product yield.

Innovation Solution

A method and apparatus that automatically correct the position of a wafer by acquiring etching parameters from preset points on an etched wafer, determining the central point of the etch rate distribution map, and adjusting the position of the subsequent wafer to align with this central point.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If manual correction method is used to adjust wafer position, then position correction can be completed, but human error increases and correction time is prolonged

Engineering Contradiction:
Improvewafer position accuracyVSAvoidcorrection accuracy
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The system uses the etch rate distribution map generated from the wafer etching process itself to automatically determine the central point position and guide subsequent wafer positioning, eliminating the need for manual intervention and human judgment in the correction process

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent replaces the manual mechanical adjustment operation with an automated control system that uses etch rate data processing and automatic manipulator control to achieve wafer position correction, thereby eliminating human error

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If manual correction method is used to adjust wafer position, then position correction can be completed, but machine downtime increases

Engineering Contradiction:
Improvewafer position accuracyVSAvoidcorrection time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The system performs preliminary analysis of the etch rate distribution map to determine the central point position offset before the next wafer is processed, allowing the manipulator to be pre-positioned and reducing waiting time during wafer correction operations

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent maintains continuous operation by using the etch rate data from completed wafers to immediately guide the positioning of subsequent wafers, eliminating idle time and keeping the manufacturing process flowing without interruption

Inventive Principle:
Principle #20Continuity of useful action

3Productivity

If automatic correction method is implemented, then human error is reduced and correction time is shortened, but system complexity increases

Engineering Contradiction:
Improvecorrection efficiencyVSAvoidcorrection system complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The control system integrates multiple functions including etch rate data acquisition, central point position calculation, manipulator control, and wafer positioning into a single automated platform that performs all correction operations without requiring separate manual procedures

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The system uses feedback from the etch rate distribution map of previously etched wafers to automatically adjust and optimize the positioning of subsequent wafers, creating a closed-loop control system that continuously improves accuracy based on actual process data

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS12332625B2Method and apparatus for correcting position of wafer and storage medium
Publication Date: 2025.06.17 CHANGXIN MEMORY TECH INC
  • US12332625B2 patent drawing
  • US12332625B2 patent drawing
  • US12332625B2 patent drawing

AI summary

The present application provides a method and apparatus for correcting the position of a wafer and a storage medium. The method includes: acquiring etching parameters of preset points on an etched first wafer, wherein the etching parameters include positional information and an etch rate; determining the positional information of the central point of an etch rate distribution map of the first wafer according to the etching parameters of the preset points; and correcting the position of a second wafer to be etched according to the positional information of the central point of the etch rate distribution map of the first wafer, so that the circle center of the second wafer coincides with the central point of the etch rate distribution map of the first wafer.