Wafer Pre-Wetting Holder Channels for Bubble-Free Copper Plating
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Solution Overview
Problem
The copper electroplating process in semiconductor manufacturing often results in defects due to nano-bubbles trapped in the electroplated copper layer, which limits the quality of conductive features and reduces production yield.
Innovation Solution
A pre-wetting process is employed to enhance the wetting ability of the seed material layer, using controlled fluid delivery methods to prevent bubble formation, followed by electrochemical plating to form a conductive material layer without defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If copper electroplating is performed directly on the seed material layer, then the conductive feature can be formed quickly, but nano-bubbles are trapped in the electroplated copper layer causing defects
Solution Approach 1:
A pre-wetting process is performed before electroplating to enhance the wetting ability of the seed material layer. This preliminary action prevents bubble formation during subsequent electroplating by ensuring proper fluid penetration and adhesion, thereby eliminating defects without sacrificing plating speed
2Ease of manufacture
If conventional electroplating is used, then the process is simple and fast, but the production yield is reduced due to trapped nano-bubbles
Solution Approach 1:
The pre-wetting step is integrated into the electroplating process flow, performing a preliminary wetting enhancement before plating begins. This simple additional step prevents bubble entrapment and improves production yield while maintaining process simplicity and electroplating speed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The pre-wetting process effectively prevents bubble formation, ensuring defect-free conductive features and improving the electrical performance of semiconductor devices.
Implementation Method 1
A pre-wetting process is employed to enhance the wetting ability of the seed material layer, using controlled fluid delivery methods to prevent bubble formation
Implementation Method 2
followed by electrochemical plating to form a conductive material layer without defects
Data Source
AI summary
A semiconductor apparatus includes a process chamber, a workpiece holder and a pre-wetting fluid tank. The workpiece holder is disposed within the process chamber to hold a semiconductor workpiece. The pre-wetting fluid tank is disposed outside the process chamber, wherein the workpiece holder comprises an inner sidewall, an outer sidewall and a channel between the inner sidewall and the outer sidewall, the channel is coupled to the pre-wetting fluid tank, and the outer sidewall is higher than the inner sidewall relative to a major surface of the semiconductor workpiece.


