Semiconductor Wafer Profile Analysis for Slice-Cutting Direction Detection

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Solution Overview

Problem

Existing methods fail to effectively identify the slice-cutting direction of a wire saw, which is crucial for detecting peculiar wavy shapes on semiconductor wafers that can lead to residual film abnormalities and device fabrication failures.

Innovation Solution

A method involving profile measurement data acquisition using a wafer-profile measurement system, followed by extraction of diameter-direction profile data, differentiation to obtain differential profiles, and comparison to determine the slice-cutting direction, allowing for precise evaluation and screening of wafers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If nanotopography measurement is used to evaluate wafer surface, then measurement of minute asperity is achieved, but slice-cutting direction cannot be identified

Engineering Contradiction:
Improvenanotopography measurement precisionVSAvoidslice-cutting direction information
Core Design Contradiction:
Measurement precisionVSLoss of information

Solution Approach 1:

The patent segments the wafer surface measurement into two distinct components: nanotopography (minute asperity) and macroscopic profile (diameter-direction shape). By separating these measurement scales and analyzing them independently, the system can identify slice-cutting direction from macroscopic profile while maintaining nanotopography measurement precision for quality evaluation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from two-dimensional nanotopography surface mapping to three-dimensional macroscopic profile measurement in the thickness direction. By adding the vertical dimension (thickness direction) to the measurement, the system can detect diameter-direction shape variations that reveal slice-cutting direction information lost in planar nanotopography measurements.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If conventional wafer shape evaluation is used, then peripheral shape is evaluated, but slice-cutting direction cannot be identified

Engineering Contradiction:
Improvewafer shape qualityVSAvoidslice-cutting direction information
Core Design Contradiction:
Manufacturing precisionVSLoss of information

Solution Approach 1:

The patent extracts the slice-cutting direction information from the overall wafer shape data by specifically analyzing diameter-direction profile variations. Instead of evaluating all shape parameters equally, the system isolates and focuses on the diameter-direction measurements that contain slice-cutting direction signatures, separating this critical information from other shape characteristics.

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If slice-cutting direction identification method is established, then peculiar wavy shape detection is improved, but measurement and evaluation complexity increases

Engineering Contradiction:
Improvewavy shape detection accuracyVSAvoidmeasurement system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent performs preliminary identification of slice-cutting direction before conducting detailed wavy shape detection and evaluation. By first determining the slice-cutting direction from macroscopic profile measurements, the system can then orient subsequent nanotopography measurements and analysis along the correct directional axes, simplifying the overall detection process and improving reliability without requiring complex real-time multi-parameter analysis.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS12300553B2Method for evaluating semiconductor wafer, method for selecting semiconductor wafer and method for fabricating device
Publication Date: 2025.05.13 SHIN ETSU HANDOTAI CO LTD
  • US12300553B2 patent drawing
  • US12300553B2 patent drawing
  • US12300553B2 patent drawing

AI summary

An evaluation method including steps of: acquiring profile measurement data on an entire surface in a thickness direction of a mirror-polished wafer; identifying a slice-cutting direction by performing first-order or second-order differentiation on diameter-direction profile measurement data on the wafer to acquire differential profiles at predetermined rotation angles and pitches, and comparing the acquired differential profiles; acquiring x-y grid data by performing first-order or second-order differentiation on profile measurement data at a predetermined pitch in a y-direction at a predetermined interval in an x-direction perpendicular to the y-direction, which is the identified slice-cutting direction; acquiring, from the x-y grid data, a maximum derivative value in an intermediate region including the wafer center in the y-direction and a maximum derivative value in upper-end-side and lower-end-side regions located outside the intermediate region; and judging failure incidence possibility in a device fabrication process based on the maximum derivative values.