Wafer Reactor Pressure Balancing to Protect Internal Heaters
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Solution Overview
Problem
In semiconductor wafer manufacturing, maintaining a pressure differential between the reaction chamber and the hollow chamber to prevent reactant gas from entering the hollow chamber and reacting with the heating device, while avoiding excessive pressure that could cause the lid member to float and disrupt epitaxial layer growth.
Innovation Solution
A semiconductor wafer manufacturing apparatus with a controller that adjusts the inert gas pressure in the hollow chamber to be higher than the reaction chamber pressure but equal to or lower than the minimum closing pressure of the lid member, using a susceptor with a pressure lower than the outer peripheral portion to prevent reactant gas entry and lid member separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the pressure in the hollow chamber is increased to prevent reactant gas from entering and reacting with the heating device, then the heating device is protected from degradation, but the lid member may float and separate from the cylindrical member, disrupting epitaxial layer growth
Solution Approach 1:
The patent applies parameter changes by precisely controlling the pressure parameter in the hollow chamber. The pressure is maintained within a specific range (higher than reaction chamber pressure but not exceeding the lid member weight/area ratio) to achieve both protection of the heating device and prevention of lid member floating. This quantitative parameter control resolves the contradiction between the two opposing requirements.
2Object-affected harmful factors
If inert gas is supplied to maintain pressure differential, then reactant gas entry is prevented, but excessive pressure buildup may occur without proper discharge control
Solution Approach 1:
The patent implements feedback control through the inert gas discharge pipe that communicates with the hollow chamber. The discharge mechanism provides continuous pressure regulation, sensing the pressure state and adjusting the discharge rate to maintain the pressure within the optimal range. This feedback loop prevents both reactant gas entry and excessive pressure buildup by dynamically balancing inert gas supply and discharge.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively restricts reactant gas entry into the hollow chamber, prevents premature heating device degradation, and ensures proper epitaxial layer growth by maintaining the lid member in contact with the cylindrical member.
Implementation Method 1
maintaining a pressure differential between the reaction chamber and the hollow chamber to prevent reactant gas from entering the hollow chamber
Implementation Method 2
a heating device disposed in a hollow chamber surrounded by the cylindrical member and the lid member
Data Source
AI summary
A semiconductor wafer manufacturing apparatus includes a reaction chamber, a reactant gas supply pipe and a reactant gas discharge pipe communicated with the reaction chamber, a rotating device having a cylindrical member, a lid member disposed on one end portion of the cylindrical member, a heating device disposed in a hollow chamber that is a space surrounded by the cylindrical member and the lid member, an inert gas supply pipe and an inert gas discharge pipe communicated with the hollow chamber, and a controller. The controller is configured to adjust an amount of an inert gas discharged from the inert has discharge pipe such that a pressure in the hollow chamber is higher than a pressure in the reaction chamber and equal to or lower than a pressure of a minimum closing portion of the lid member.