Grounded Wafer Support Ring for Electrostatic Discharge During Spin Rinse

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Solution Overview

Problem

The challenge in semiconductor manufacturing is the efficient and complete removal of polishing slurry and residues post-CMP process without introducing defects or damage, and the accumulation of electrostatic charges during wafer rinsing and drying leads to corrosion and particle contamination.

Innovation Solution

A rinsing and drying tool with a grounded conductive chuck ring and chuck pins that encircle the wafer periphery, providing a minimum discharge path for electrostatic charges, ensuring continuous electrical contact and reducing charge build-up during high-speed rotation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the wafer is rinsed and spun at high speed to remove polishing slurry and residues, then cleaning efficiency is improved, but electrostatic charges accumulate on the wafer surface causing corrosion and particle contamination

Engineering Contradiction:
Improvecleaning efficiencyVSAvoidelectrostatic charge accumulation
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

A conductive member is introduced as an intermediary between the wafer and ground to provide a discharge path for electrostatic charges. The conductive member contacts the wafer periphery and connects to ground, allowing charges to dissipate during high-speed spinning without affecting the cleaning effectiveness

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrostatic charges that accumulate during high-speed spinning are converted from a harmful factor into a manageable phenomenon by providing a controlled discharge path. The conductive member allows charges to be safely dissipated to ground, transforming the potential corrosion and contamination risk into a controlled electrical discharge process

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Loss of substance

If traditional cleaning methods are used to remove polishing residues, then slurry removal is achieved, but defects and damage may be introduced to the substrate surface

Engineering Contradiction:
Improvepolishing slurry removalVSAvoidsubstrate surface quality
Core Design Contradiction:
Loss of substanceVSManufacturing precision

Solution Approach 1:

The patent replaces aggressive mechanical cleaning methods with a gentler electrostatic discharge mechanism. By using the conductive member to dissipate charges during normal spinning, the need for additional aggressive cleaning steps is reduced, preventing mechanical damage to the substrate while still achieving effective slurry removal

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively dissipates electrostatic charges, minimizing corrosion and particle contamination, enhancing the quality and yield of semiconductor devices by preventing defects and improving process efficiency.

Implementation Method 1

support the semiconductor wafer continuously along a periphery of the semiconductor wafer with an electrically grounded conductive member; and spin the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer

Methodology Applied
Scientific EffectElectrostatic discharge: Electrostatic Discharge

Data Source

PatentUS12568786B2Processing tool and method
Publication Date: 2026.03.03 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12568786B2 patent drawing
  • US12568786B2 patent drawing
  • US12568786B2 patent drawing

AI summary

Provided are a tool and a method for processing a semiconductor wafer. A processing method includes supporting a semiconductor wafer continuously along a periphery of the semiconductor wafer with an electrically grounded conductive member; and spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.