Wafer Shape Control Using Local Laser Stress Modification
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Solution Overview
Problem
Existing methods for conditioning wafers and dies in semiconductor technology are not always optimal, particularly for wafer-to-wafer or wafer-to-die bonding, as they often fail to effectively minimize or eliminate undesired properties such as mechanical stress and surface defects, and are not customizable to specific processing needs.
Innovation Solution
Applying a plurality of local modifications within the surface layer and/or substrate of wafers and dies using laser pulses, allowing for precise and flexible shape control without affecting sensitive process structures, and enabling improved bonding quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional conditioning methods (substrate clean, plasma treatment, thermal treatment, CMP) are applied to minimize undesired properties, then surface quality improves, but the conditioning is not customizable to specific processing needs and may not effectively address localized mechanical stress and shape deviations
Solution Approach 1:
The patent applies local modifications at specific positions within the substrate using laser pulses or ion implantation, rather than uniform conditioning across the entire substrate. This enables localized correction of shape deviations and mechanical stress while preserving other areas, achieving high shape control precision and customization simultaneously
Solution Approach 2:
The patent changes physical parameters (laser pulse energy, ion implantation dose, modification depth) to create controlled local modifications in the substrate. By varying these parameters, the conditioning can be tailored to specific processing needs and localized defects, resolving the contradiction between precision and adaptability
2Shape
If local modifications are applied within the substrate to correct shape deviations, then shape control improves, but sensitive process structures may be affected or damaged
Solution Approach 1:
The patent segments the modification process by applying changes at different depths and locations within the substrate. By carefully controlling the depth and distribution of local modifications, shape control is achieved while avoiding damage to surface process structures
Solution Approach 2:
The patent applies local modifications to the substrate before subsequent processing steps. By pre-conditioning the substrate with controlled local changes, shape deviations are corrected in advance without affecting later process structures that will be formed on the substrate surface
3Reliability
If conventional conditioning is applied before bonding, then bonding preparation is performed, but undesired properties such as mechanical stress and surface defects are not effectively minimized
Solution Approach 1:
The patent applies localized modifications to specific areas of the substrate that exhibit mechanical stress or surface defects, rather than uniform conditioning. This targeted approach effectively minimizes harmful factors while preparing the substrate for bonding, improving bonding quality without unnecessary processing of already sound areas
Solution Approach 2:
The patent uses laser pulses or ion implantation to create controlled local modifications that relieve mechanical stress and reduce surface defects. By converting the potential harm of uncontrolled stress into controlled local changes, the bonding interface quality is improved
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables precise and flexible shape control of wafers and dies, enhancing bonding quality by reducing undesired properties and ensuring consistent bonding parameters, even in the presence of complex process structures.
Implementation Method 1
The plurality of local modifications is applied within the wafer, in particular within the substrate and/or within the at least one surface layer, in particular by applying a plurality of laser pulses
Implementation Method 2
applying a plurality of local modifications within the at least one surface layer; and/or applying a plurality of local modifications within the substrate, via the at least one surface layer
Data Source
Figure 1A~2F
Figure 3A~3B
Figure 4
AI summary
A method for adjusting a shape of a wafer and/or die having a substrate and at least one surface layer comprises applying a plurality of local modifications in the wafer and/or die, wherein applying the plurality of local modifications comprises applying a plurality of local modifications within the at least one surface layer and/or applying a plurality of local modifications within the substrate, via the at least one surface layer.