Thin Microelectronic Wafer Singulation by Ion-Implanted Cleaving

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Solution Overview

Problem

The fragility and susceptibility to cracking of ultra-thin microelectronic devices due to reduced thickness and bond line thickness exacerbate damage from stress and contaminants, while conventional dicing methods limit the yield and increase production costs.

Innovation Solution

A method involving ion implantation and controlled heating or stretching to create controlled fractures along streets between devices, reducing street width and minimizing damage from contaminants, thereby increasing yield and reducing production costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the thickness of microelectronic devices is reduced to about 50 μm or less, then the footprint and height of assemblies are reduced, but device fragility and susceptibility to cracking under stress increases

Engineering Contradiction:

Improvedevice thicknessVSAvoiddevice fragility

Core Design Contradiction:

Volume of moving objectVSStrength

Solution Approach 1:

The patent applies preliminary action by performing ion implantation into the streets between devices before the dicing process. This pre-treatment creates controlled fracture paths that guide where cracks will propagate during subsequent dicing, preventing uncontrolled cracking in the thinned devices while enabling clean separation. The ion-implanted regions serve as predetermined weak points that direct stress along safe paths away from the device bodies.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent converts the harmful effect of stress-induced cracking into a beneficial controlled fracture process. By intentionally creating ion-implanted regions with controlled weakness, the patent directs stress to specific locations during dicing, transforming what would be random damaging cracks into predictable, clean separation paths along the streets between devices.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Productivity

If conventional dicing methods are used, then devices can be separated, but yield is limited and production costs increase

Engineering Contradiction:

ImproveyieldVSAvoidproduction cost

Core Design Contradiction:

ProductivityVSEase of manufacture

Solution Approach 1:

The patent replaces conventional mechanical dicing systems with a hybrid approach combining ion implantation (a form of radiation processing) followed by controlled mechanical fracture. Instead of relying solely on high-power mechanical sawing or laser cutting that require wide streets and generate heat and debris, the patent uses ion implantation to pre-weaken the streets, allowing subsequent separation with minimal mechanical force and at lower temperatures, thereby improving yield and reducing costs.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Volume of moving object

If bond line thickness is decreased, then height of 3D assemblies is reduced, but susceptibility to damage from particulate contaminants increases

Engineering Contradiction:

Improvebond line thicknessVSAvoidcontaminant susceptibility

Core Design Contradiction:

Volume of moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent extracts or removes the problematic wide street regions between devices through ion-implanted controlled fracture. By concentrating the separation function into narrowly defined ion-implanted paths, the patent eliminates the need for wide mechanical clearance zones, enabling thinner bond lines while containing potential contaminant generation to minimal, controlled regions that can be more effectively managed.

Inventive Principle:

Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the yield of microelectronic devices by allowing thinner devices with reduced street widths, minimizing damage, and decreasing production costs through improved singulation processes.

Implementation Method 1

implanting ions to initiate dislocations in semiconductor material of the wafer along streets between the microelectronic devices

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Implementation Method 2

heating the wafer to form cracks along the streets from stress concentrations proximate the dislocations

Methodology Applied

Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 3

transferring the semiconductor wafer to an expandable carrier material and adhering the semiconductor wafer to a surface of the carrier material. The method may also include applying a tensile force on the wafer by expansion of the carrier material to form cracks in the streets between the microelectronic devices

Methodology Applied

Scientific EffectMechanical expansion:

Data Source

PatentUS12406847B2Microelectronic devices and related methods of fabricating microelectronic devices

Publication Date: 2025.09.02 MICRON TECHNOLOGY INC

AI summary

A microelectronic device may have side surfaces each including a first portion and a second portion. The first portion may have a highly irregular surface topography extending from an adjacent surface of the microelectronic device. The second portion may have a less uneven surface extending from the first portion to an opposing surface of the microelectronic device. Methods of forming the microelectronic device may include creating dislocations in the wafer in a street between the one or more microelectronic devices by implanting ions and cleaving the wafer responsive to failure of stress concentrations near the dislocations through application of heat, tensile forces or a combination thereof. Related packages and methods are also disclosed.