Semiconductor Wafer Laser Slicing With Overlapping Modified Points
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Solution Overview
Problem
Existing methods for laser slicing silicon carbide wafers suffer from material loss due to burrs at the laser scan end and require precise alignment and synchronization of pulse lasers with different pulse widths, making them impractical for large-scale industrial application.
Innovation Solution
A method involving multiple laser scans with controlled scanning paths, point spacing, and laser parameters to form overlapping modified points, reducing material loss and burrs, and optimizing processing efficiency and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple laser scans with overlapping modified points are performed, then manufacturing precision and burr reduction are improved, but processing time and device complexity increase
Solution Approach 1:
The laser scanning process is divided into multiple passes (first laser scan and second laser scan), where each pass creates modified points at different positions. The first scan creates initial modified points, and the second scan creates additional modified points with overlap, segmenting the modification process to achieve better precision without requiring excessive energy in a single pass.
Solution Approach 2:
The laser scanning is performed periodically with multiple scans across the same region. The laser beam repeatedly scans the crystal ingot surface, creating modified points in a periodic manner. This periodic action allows the modified points to accumulate and overlap, enhancing the separation effect while maintaining controlled processing time through systematic repetition.
2Manufacturing precision
If pulse laser with different pulse widths is used, then manufacturing precision is improved, but device complexity and synchronization requirements increase
Solution Approach 1:
The patent combines two different laser scanning processes into one unified method. The first laser scan and second laser scan are merged into a single processing workflow, where both scans work together to create the desired modified points. This merging approach achieves the precision benefits of using different pulse widths while maintaining a relatively simple device architecture by using the same laser system for both scans.
Solution Approach 2:
The laser scanning parameters are changed between the first and second scans. The scanning speed, pulse repetition frequency, or other laser parameters are adjusted to create different modified point characteristics in each scan. This parameter variation allows precise control over the modified points without requiring fundamentally different laser systems, thereby reducing device complexity.
3Productivity
If laser scanning speed is increased, then productivity is improved, but manufacturing precision and burr reduction effectiveness decrease
Solution Approach 1:
The laser scanning process maintains continuous useful action by performing multiple overlapping scans. Instead of relying on a single high-speed pass that might compromise precision, the system performs multiple scans that collectively cover the entire separation surface. The continuity of this multi-scan process ensures that no region is missed, maintaining precision while allowing optimized scanning speeds.
Solution Approach 2:
The patent applies partial action by performing multiple scans that overlap beyond what a single scan would provide. The modified points from the first scan and the modified points from the second scan overlap in certain regions, creating an excessive action effect in those areas. This ensures thorough modification and burr reduction at the separation surface, maintaining precision even at higher scanning speeds.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces material loss and burrs, simplifies processing conditions, and enhances industrial applicability by ensuring consistent results suitable for batch production.
Implementation Method 1
performing n times of the laser scans on the predetermined peeling surface inside a crystal ingot on which a pulse laser focuses or below the predetermined peeling surface to form a modified point on the predetermined peeling surface
Implementation Method 2
forming an overlapping region between the modified points formed by at least two laser scans to form a crack extending transversely along the predetermined peeling surface in the overlapping region
Data Source
AI summary
A generation method of semiconductor wafers is provided, including: setting a count of laser scans, setting a scanning path for each laser scan and a point spacing between two adjacent modified points on the scanning path; determining, based on a predetermined rule for each laser scan, a laser scanning speed and a laser pulse repetition frequency required to achieve the point spacing and determining a corresponding diameter of a modified point, and determining laser pulse energy required to achieve the diameter of the modified point and an offset distance of a laser focal point relative to a predetermined peeling surface; performing n times of the laser scans on the predetermined peeling surface inside a crystal ingot on which a pulse laser focuses or below the predetermined peeling surface to form a modified point on the predetermined peeling surface and forming an overlapping region between the modified points formed by at least two laser scans to form a crack extending transversely along the predetermined peeling surface in the overlapping region; and peeling the crystal ingot along the predetermined peeling surface to obtain a wafer and a remaining ingot.


