Wafer Source Splitting for Thick Semiconductor Wafer Reuse
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Solution Overview
Problem
The conventional method for manufacturing semiconductor devices results in inefficient use of semiconductor wafers due to increased thickness, leading to longer grinding times and a decrease in the number of devices produced per unit volume, as thicker wafers require more material to be removed and are less consumable.
Innovation Solution
A method involving a semiconductor wafer source with a first and second main surface and a side wall, where element forming regions are created on the first main surface, and the wafer is cut along a horizontal direction to separate it into an element formation wafer and an element non-formation wafer, allowing the non-formation wafer to be reused as a new source, thereby reducing waste and manufacturing delays.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the semiconductor wafer thickness is increased to suppress deflection, then the wafer stability is improved, but the grinding time increases and the number of devices per unit volume decreases
Solution Approach 1:
The wafer is divided into two separate wafers by cutting along a horizontal direction parallel to the first main surface from a thickness direction intermediate portion. This segmentation allows the element formation wafer to be processed for device fabrication while the element non-formation wafer can be reused as a new wafer source, effectively doubling the utilization of the original thick wafer material and improving productivity without compromising stability.
2Area of stationary object
If the semiconductor wafer diameter is increased, then the device size is improved, but the grinding time increases due to increased thickness
Solution Approach 1:
By segmenting the thick wafer into element formation and element non-formation wafers, the effective processing thickness is reduced. The element non-formation wafer can be reused as a new wafer source, thereby reducing the total grinding time required for large-diameter wafers and improving manufacturing efficiency.
3Stability of the object's composition
If the semiconductor wafer thickness is increased, then the deflection is suppressed, but the material consumption increases
Solution Approach 1:
Instead of discarding the element non-formation wafer after element formation, the invention recovers and reuses it as a new wafer source for subsequent element formation processes. This reduces material waste and improves the efficiency of thick wafer utilization while maintaining the deflection suppression benefits of increased thickness.
4Strength
If the wafer thickness is increased, then the structural integrity is improved, but the manufacturing efficiency decreases
Solution Approach 1:
The thick wafer is segmented into element formation and element non-formation wafers, allowing the element non-formation wafer to be reused as a new wafer source. This segmentation maintains the structural integrity benefits of thick wafers while improving manufacturing efficiency by reducing the total number of wafers needed and minimizing material waste.
Data Source
AI summary
A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.