Wafer Spin-Rinse Acceleration Control to Prevent Fluid Atomization
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Solution Overview
Problem
Existing semiconductor manufacturing processes face issues with particulate contamination due to the atomization of rinse fluids during spin-rinsing, leading to incomplete removal of rinse fluids from via openings and subsequent transport of particles, which affects the formation of integrated circuits.
Innovation Solution
Implementing a spin-rinsing process with controlled rotational acceleration limits, specifically using a constant acceleration no greater than 125 rpm/s, to prevent atomization of rinse fluids and effectively remove contaminants from via openings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high rotational speed is used during spin-rinsing to remove rinse fluid, then rinse fluid removal efficiency is improved, but atomization of rinse fluid occurs causing particulate contamination
Solution Approach 1:
The patent applies dynamics by implementing a multi-stage rotational speed profile that changes over time. The wafer rotation speed is dynamically adjusted through acceleration phases (first and second acceleration periods) and a deceleration period, rather than maintaining a constant high speed. This dynamic approach allows the system to achieve effective rinse fluid removal while avoiding the atomization that occurs with abrupt high-speed rotation.
Solution Approach 2:
The patent changes the parameter of rotational speed over time to resolve the contradiction. By controlling the rotational speed to increase during acceleration periods and decrease during the deceleration period, the system optimizes rinse fluid removal efficiency while preventing particulate contamination through controlled parameter transitions rather than sustained high-speed operation.
2Speed
If rotational speed is increased rapidly to extract rinse fluid, then extraction efficiency is improved, but atomization occurs transporting particles
Solution Approach 1:
The patent implements dynamics by using controlled acceleration periods to gradually increase rotational speed rather than abrupt changes. The multi-stage acceleration approach (first and second acceleration periods) allows the system to reach high speeds while minimizing the shock that causes atomization, and the subsequent deceleration period further reduces harmful effects.
Solution Approach 2:
The patent applies periodic action through the cyclic pattern of acceleration and deceleration periods. The rotational speed follows a periodic profile with distinct phases of increasing speed (acceleration periods) and decreasing speed (deceleration period), which optimizes rinse fluid extraction while preventing the continuous high-speed operation that leads to atomization and particle transport.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces particulate contamination by ensuring complete removal of rinse fluids and debris, thereby improving the yield and reliability of integrated circuit manufacturing.
Implementation Method 1
increasing a rotational speed of the substrate with a constant acceleration no greater than 125 revolutions per minute per second (rpm/s) from the first rotational speed to a second rotational speed
Data Source
AI summary
Methods and apparatus for forming an integrated circuit device, including performing a spin-cleaning step at a first rotational speed on a semiconductor substrate supporting the integrated circuit device at an intermediate stage of manufacturing. A rinse fluid is then dispensed over a top surface of the substrate. A rotational speed of the substrate is increased with a constant acceleration no greater than 125 revolutions per minute per second (rpm/s) from the first rotational speed to a second rotational speed. The second rotational speed is maintained for a rinse fluid extraction period. The rotational speed is then reduced to zero.