Semiconductor Wafer Splitting With Vacuum Ring Bonding
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Solution Overview
Problem
The conventional method of forming semiconductor substrates using hydrogen ion implantation requires a support for the divided wafer, which complicates handling due to the need for high-cost chemical mechanical polishing (CMP) and subsequent removal of the support, leading to manufacturing inefficiencies.
Innovation Solution
A method involving a dividing layer formation, a fixing part formation, and a dividing step, where a ring-shaped fixing part is created under reduced pressure to generate a pressure difference for attractive forces, allowing secure attachment without full-surface CMP, facilitating handling of the semiconductor substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If CMP is performed on joint surfaces to join semiconductor wafer and support, then joining strength is improved, but manufacturing cost increases and process complexity increases
Solution Approach 1:
The patent divides the joining process into two stages: first joining the wafer to the support under reduced pressure without CMP, then performing CMP only on specific regions after division. This segmentation eliminates the need for full-surface CMP before joining, reducing manufacturing cost and process complexity while maintaining sufficient joining strength through the pressure differential method.
2Strength
If CMP is performed on joint surfaces to join semiconductor wafer and support, then joining strength is improved, but manufacturing time increases
Solution Approach 1:
The patent performs the joining action preliminarily under reduced pressure before division, establishing the wafer-support connection in advance. This preliminary joining eliminates the need for time-consuming full-surface CMP processing before joining, significantly reducing manufacturing time while ensuring sufficient bonding strength for subsequent handling and processing.
3Stability of the object's composition
If support is firmly coupled to semiconductor wafer using CMP, then holding stability is improved, but support removal becomes difficult
Solution Approach 1:
The patent creates different bonding characteristics in different regions: the peripheral region maintains strong bonding through pressure differential for stable holding during processing, while the central region allows easier separation after division. This local differentiation of bonding quality enables both stable holding during manufacturing and easy support removal afterward, resolving the contradiction between holding stability and removal ease.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient handling of semiconductor substrates by generating sufficient joining forces through pressure differences, reducing manufacturing costs and minimizing defects during high-temperature processes.
Implementation Method 1
by forming the ring-shaped fixing part in an atmosphere at a lower pressure than a predetermined pressure, in the atmosphere at the predetermined pressure, it becomes possible to generate a pressure difference between a pressure inside the ring shape of the fixing part and a pressure outside the ring shape
Implementation Method 2
generate a pressure difference between a pressure inside the ring shape of the fixing part (inside pressure) and a pressure outside the ring shape (outside pressure). This eventually allows generation of attractive force resulting from the pressure difference and acting between the first substrate and the second substrate
Implementation Method 3
hydrogen ions are implanted into a semiconductor wafer from a surface thereof to form a dividing layer in the semiconductor wafer
Data Source
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AI summary
A method of manufacturing a semiconductor device comprises a dividing layer forming step, a fixing part forming step, and a dividing step. The dividing layer forming step forms a dividing layer in a position at a predetermined depth from a surface of a first substrate containing semiconductor as a main component thereof. The dividing layer is for allowing a semiconductor substrate having a thickness corresponding to the predetermined depth to be divided from the first substrate. The fixing part forming step forms a fixing part after the dividing layer forming step. The fixing part is for fixing a part of the first substrate to become the semiconductor substrate to a second substrate, and is formed into a ring shape in an atmosphere at a lower pressure than a predetermined pressure, thereby sealing the interior of the ring shape. The dividing step divides the first substrate at the dividing layer in an atmosphere at the predetermined pressure after the fixing part forming step.