Segmented Wafer Stage Heating for CD Uniformity Control
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Solution Overview
Problem
The critical dimension (CD) uniformity of a semiconductor wafer is affected by varying baking temperatures across different areas, leading to deformation and non-uniform film deposition during processes like etching and deposition.
Innovation Solution
A system with a stage having multiple heating lines coupled to a heater is used to control temperature locally on the wafer surface, adjusting the heating temperature and speed at each area to maintain CD uniformity and correct warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If uniform heating is applied across the wafer, then the heating process is simple, but CD uniformity deteriorates due to warpage and deformation
Solution Approach 1:
The heating system is segmented into multiple independent heating zones (first heating zone, second heating zone, third heating zone, fourth heating zone) corresponding to different areas of the wafer. Each zone can be controlled independently to apply different heating temperatures, allowing compensation for warpage and deformation while maintaining CD uniformity across the entire wafer surface.
2Manufacturing precision
If local temperature control is implemented, then CD uniformity improves, but device complexity increases
Solution Approach 1:
Different regions of the wafer are assigned different heating characteristics based on their specific requirements. The first heating zone applies a first heating temperature, the second zone applies a second heating temperature, and so on. This local quality approach allows each area to receive the precise temperature control needed to compensate for its specific warpage or deformation characteristics, thereby improving overall CD uniformity.
3Manufacturing precision
If heating temperature is increased to compensate for warpage, then CD uniformity improves, but energy consumption increases
Solution Approach 1:
The heating temperature parameter is changed dynamically across different zones rather than applying a uniform temperature. Each heating zone operates at its optimal temperature parameter (first heating temperature, second heating temperature, etc.) to achieve the minimum necessary heating for CD uniformity compensation, avoiding excessive energy consumption while maintaining precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively adjusts CD uniformity and warpage by precisely controlling temperature at each heating point, ensuring consistent film deposition quality across the wafer.
Implementation Method 1
The heater is electrically coupled to the processor and configured to control the temperature of the wafer by the stage. The stage includes a plurality of heating lines electrically coupled to the heater for controlling the temperature in at least one area of the upper surface of the stage.
Data Source
AI summary
A system and a method for manufacturing a semiconductor device are provided. The system includes a processor, a processing reaction chamber body, a stage, and a heater. The processing reaction chamber body is configured to maintain a low-pressure environment, the system being configured to deposit a film on a wafer disposed in the low-pressure environment. The stage is configured to support the wafer during deposition of the film. The heater is electrically coupled to the processor and configured to control the temperature of the wafer by the stage. The stage includes an upper surface in contact with the wafer, and wherein the stage includes a plurality of heating lines electrically coupled to the heater for controlling the temperature in at least one area of the upper surface of the stage.