Wafer Stage Vacuum Insulation Layout for Lower Heater Power

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Solution Overview

Problem

Existing plasma processing apparatuses face high power consumption due to inefficient heat transfer and temperature regulation in the wafer stage, leading to increased operational costs.

Innovation Solution

The plasma processing apparatus incorporates a wafer stage with a metallic base material, a dielectric film, and a refrigerant flow path in a concentric or spiral shape, featuring vacuum insulating spaces between the heater and refrigerant path to minimize heat transfer, reducing power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the dielectric film and heater cover the entire upper surface of the metallic base material, then the temperature control function is improved, but heat is easily released from the heater to the refrigerant flow path, causing high power consumption

Engineering Contradiction:
Improvewafer temperature controlVSAvoidheater power consumption
Core Design Contradiction:
TemperatureVSUse of energy by moving object

Solution Approach 1:

The patent segments the base material into multiple regions: a first region with the refrigerant flow path, a second region with the heater, and a third intermediate region between them. This spatial segmentation prevents direct heat transfer from the heater to the refrigerant flow path, reducing energy loss and power consumption while maintaining temperature control functionality.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The third region acts as an intermediary zone between the heater (second region) and the refrigerant flow path (first region). This intermediate region serves as a thermal buffer that mediates heat transfer, preventing excessive heat loss from the heater to the refrigerant while still allowing controlled thermal management.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If the heater generates large amounts of heat to maintain wafer temperature, then the temperature regulation function is improved, but the amount of heat transferred to the base material increases, requiring larger heater capacity and higher power consumption

Engineering Contradiction:
Improvewafer temperature maintenanceVSAvoidheat loss to base material
Core Design Contradiction:
TemperatureVSLoss of energy

Solution Approach 1:

By segmenting the base material into distinct functional regions (refrigerant flow path region, heater region, and intermediate region), the patent confines heat transfer pathways. This prevents unnecessary heat loss to the entire base material structure, reducing energy waste while maintaining effective temperature control.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different thermal management strategies to different regions: the first region handles cooling via refrigerant flow, the second region generates heat, and the third region provides thermal isolation. This localized functional differentiation optimizes heat management efficiency and reduces overall energy loss.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for efficient temperature control of the wafer, reducing power consumption and operational costs while maintaining processing efficiency.

Implementation Method 1

at least one arc-shaped space multiply disposed about the center inside the base material between the refrigerant flow path and the heater and having an inside reduced to a predetermined degree of vacuum and sealed

Methodology Applied
Scientific EffectVacuum insulation: Vacuum

Implementation Method 2

a refrigerant flow path multiply disposed in a concentric shape or a spiral shape about a center of the base material inside the base material and allowing a refrigerant to flow therethrough

Methodology Applied
Scientific EffectHeat exchange: Heat Exchanger

Data Source

PatentUS12592367B2Plasma processing apparatus and manufacturing method of wafer stage for plasma processing apparatus
Publication Date: 2026.03.31 HITACHI HIGH TECH CORP
  • US12592367B2 patent drawing
  • US12592367B2 patent drawing
  • US12592367B2 patent drawing

AI summary

A plasma processing apparatus including a metallic base material disposed inside a wafer stage and having a cylindrical shape or a circular plate shape; a dielectric film disposed on an upper surface of the base material; a film-shaped heater disposed inside the dielectric film; a refrigerant flow path disposed in a concentric shape or in a spiral shape about a center of the base material in the base material and allowing a refrigerant to flow therethrough; and at least one arc-shaped space multiply disposed about the center in the base material between the refrigerant flow path and the heater and having an inside reduced to a predetermined degree of vacuum and sealed. A region of a portion of the base material between the disposed arc-shaped spaces is projected and overlapped on a region of an intermediate portion of the base material that partitions two of the adjacent refrigerant flow paths.