Wafer Substrate Removal via Dielectric Isolation
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Solution Overview
Problem
In semiconductor devices, passive and active components often require isolation to prevent performance degradation and cost increases due to coupling with the substrate or the need for separate chips.
Innovation Solution
A semiconductor device is formed with an interconnect region and an isolation region where the semiconductor material is removed and replaced with a dielectric replacement material, separating active components from isolated components within the substrate, allowing for cost-effective integration without separate chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If passive components are disposed in a semiconductor device with other components, then integration is achieved, but coupling to the substrate degrades performance of the passive components
Solution Approach 1:
The patent extracts the passive components from direct contact with the substrate by forming isolation regions that remove substrate material and replace it with dielectric material. This separation eliminates the harmful coupling between the substrate and passive components while maintaining their integration within the same semiconductor device structure.
Solution Approach 2:
The patent introduces dielectric replacement material as an intermediary between the substrate and passive components. This intermediary layer prevents direct coupling while allowing the passive components to remain integrated in the device, thus maintaining performance while achieving integration.
2Reliability
If passive components are disposed in separate chips, then performance is maintained, but costs increase
Solution Approach 1:
The patent merges passive components and active components into a single semiconductor device by forming isolation regions within the same substrate. This combining approach maintains the performance benefits of separation while achieving the cost benefits of integration, eliminating the need for separate chips.
Solution Approach 2:
The patent segments the substrate into isolated regions separated by dielectric material, creating distinct isolation regions for passive components while maintaining overall device integration. This segmentation allows performance maintenance through electrical isolation while achieving cost reduction through single-chip integration.
3Reliability
If deep isolation structures such as deep wells, buried layers and sinkers are formed, then component isolation is achieved, but costs increase
Solution Approach 1:
The patent replaces complex, expensive deep isolation structures (deep wells, buried layers, sinkers) with a simpler dielectric replacement material filling approach. This simpler method achieves the same isolation function at lower cost, effectively substituting expensive structures with a more economical solution.
Solution Approach 2:
The patent changes the isolation approach from deep structural modifications (deep wells and buried layers) to surface-level dielectric filling. This parameter change in the isolation method achieves equivalent electrical isolation without the high costs associated with deep substrate modification structures.
Data Source
AI summary
A semiconductor device is formed on a semiconductor substrate, including a primary portion of the substrate. An active component of the semiconductor device is disposed in the primary portion of the substrate. An interconnect region is formed on a top surface of the substrate. Semiconductor material is removed from the substrate in an isolation region, which is separate from the primary portion of the substrate; the isolation region extends from the top surface of the substrate to a bottom surface of the substrate. A dielectric replacement material is formed in the isolation region. The semiconductor device further includes an isolated component which is not disposed in the primary portion of the substrate. The dielectric replacement material in the isolation region separates the isolated component from the primary portion of the substrate.