Semiconductor Wafer Support Stage Using Suction and Gas Ejection
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Solution Overview
Problem
The existing support stages for semiconductor wafers face challenges in effectively correcting warpage issues, particularly with high-hardness wafers like SiC, where conventional barometric pressure control can lead to excessive loads and instability, and gas flow control methods may not adequately address the warpage correction without risking the wafer's detachment.
Innovation Solution
The support stage design incorporates a metallic base portion with a support portion that includes suction grooves, ejecting holes, and exhaust holes, allowing for precise control of gas flow to correct warpage by balancing atmospheric pressure and gas flow rates, ensuring stable adhesion and processing of high-hardness wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If barometric pressure control is used to correct warpage, then warpage correction is achieved, but excessive loads are applied to high-hardness wafers
Solution Approach 1:
The patent uses gas flow control through ejecting holes and exhaust holes in the support stage to apply controlled pneumatic pressure for warpage correction. Gas is ejected through the support stage to push against the wafer surface, and the exhaust holes remove excess gas, enabling precise control of the applied force to correct warpage without excessive loading
Solution Approach 2:
The patent changes the physical parameters of gas flow (flow rate, pressure) to control the warpage correction process. By adjusting gas flow rate and pressure parameters, the system achieves effective warpage correction while preventing excessive loads on high-hardness wafers
2Manufacturing precision
If gas flow control is used to correct warpage, then warpage correction is achieved, but wafer detachment may occur
Solution Approach 1:
The support stage incorporates suction grooves that use negative gas pressure to hold the wafer securely in place. Simultaneously, ejecting holes apply positive gas pressure for warpage correction. The coordinated control of suction and ejection prevents wafer detachment while achieving warpage correction
Solution Approach 2:
The system uses feedback control to monitor wafer position and adhesion status, dynamically adjusting gas flow rates to the ejecting and exhaust holes. This ensures warpage correction is applied only when needed and at appropriate levels, preventing wafer detachment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively corrects warpage in high-hardness wafers by maintaining stable adhesion and preventing detachment, enabling precise processing without excessive loads, thus improving the manufacturing efficiency of semiconductor devices.
Implementation Method 1
a suction groove (31) provided at the support portion (25) and configured so that a suction force is to be given to the second main surface (2)
Implementation Method 2
an ejecting hole (35) provided in an inward portion of the base portion (21) and configured so that gas is to be ejected toward the second main surface (2)
Implementation Method 3
an exhaust hole (36) provided in at least one of the base portion (21) and the support portion (25) and configured to discharge gas from a space (S) between the base portion (21), the support portion (25), and the second main surface (2)
Data Source
AI summary
A support stage includes a base portion, a support portion that is erected at a peripheral edge portion of the base portion and with which one surface of a wafer is to be come into contact, a suction groove that is provided at the support portion and to which a suction force with respect to the one surface is to be given, an ejecting hole that is provided in an inward portion of the base portion and by which a gas is to be ejected toward the one surface, and an exhaust hole that is provided in at least either one of the base portion and the support portion and by which a gas is to be discharged from a space between the base portion, the support portion, and the one surface.