Multi-Station Wafer Support Layout for Uniform Backside Deposition
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Solution Overview
Problem
Current multi-station plasma processing systems face challenges in depositing films on the backside of substrates due to wafer bowing and stress issues caused by front-side deposition, which can lead to processing inefficiencies and yield loss, as traditional designs restrict full-thickness coverage and introduce handling problems when flipping wafers.
Innovation Solution
A multi-station plasma processing system with station-varying support features and dual gas-flowing electrodes allows for selective deposition on both sides of the wafer, using a shower-pedestal and showerhead configuration to control gas flow and plasma distribution, enabling deposition on the backside without blocking areas and minimizing stress by counteracting front-side deposition effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional single-station design with fixed support features is used, then handling is simplified, but full-thickness coverage cannot be achieved and wafer bowing occurs
Solution Approach 1:
The processing system is divided into multiple stations (first processing station, second processing station, etc.), each with its own support features positioned at different locations. This segmentation allows different portions of the wafer backside to be supported at different stations, enabling full-thickness coverage while managing complexity through modular design.
Solution Approach 2:
The solution transitions from a single-station design to a multi-station arrangement, adding the dimension of spatial distribution across multiple processing locations. Each station handles a specific angular position, collectively covering the entire wafer backside through rotational positioning.
2Quantity of substance
If front-side deposition is performed, then film deposition is achieved, but wafer stress and bowing are introduced
Solution Approach 1:
The system performs backside deposition as a preliminary counteracting action to offset the stress and bowing that will result from subsequent front-side deposition. By depositing material on the backside first, the wafer's stress state is pre-balanced, preventing excessive bowing during front-side processing.
Solution Approach 2:
The deposition process parameters are changed by switching between front-side and backside deposition modes. The system controls which side receives deposition material by adjusting gas flow directions and plasma generation, allowing dynamic control of stress accumulation during the manufacturing process.
3Ease of operation
If wafer flipping is performed for backside processing, then backside access is enabled, but handling problems and yield loss occur
Solution Approach 1:
Instead of flipping the wafer to access the backside, the system inverts the approach by keeping the wafer in its original orientation and providing plasma and precursor gas flow from the backside. The support features are positioned to allow gas flow and plasma generation beneath the wafer without requiring mechanical flipping.
4Strength
If support features block processing areas, then wafer support is provided, but deposition coverage is reduced
Solution Approach 1:
Different stations have support features with different local characteristics positioned at different angular locations. Each station's support features are optimized for its specific position, allowing adequate support while minimizing blocking of deposition areas. The non-overlapping angular positions ensure that support features at one station do not block areas processed at other stations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables uniform backside film deposition without full-thickness voids, reduces wafer bowing, and minimizes stress, improving processing control and yield by allowing dynamic control of deposition profiles and film properties.
Implementation Method 1
A multi-station plasma processing system with station-varying support features for backside processing
Implementation Method 2
dual gas-flowing electrodes allows for selective deposition on both sides of the wafer, using a shower-pedestal and showerhead configuration to control gas flow and plasma distribution
Data Source
AI summary
Multi-station processing tools with station-varying support features for backside processing are provided. The support features in a first station may hold a wafer at a first set of points during backside deposition, blocking backside deposition, etching, or other processing at those points. The support features in a second station may hold a wafer at a second set of points that don’t overlap with the first set of points.