Wafer Support Bonding at Lower Temperature to Prevent Adhesive Residue

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Solution Overview

Problem

The bonding of a second support to a semiconductor wafer can lead to adhesive residues and bonding failure of a first support due to differences in bonding temperatures and adhesion strength between the support and the wafer.

Innovation Solution

A substrate bonding device and method that uses a bonder to attach a second support to a semiconductor wafer at a lower temperature than the first support, with a heater controlling the temperature to prevent adhesive softening and excessive adhesion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If the second support is bonded to the semiconductor wafer at a high temperature to ensure strong adhesion, then the bonding strength between the second support and the wafer is improved, but the first adhesive may soften and cause bonding failure of the first support

Engineering Contradiction:
Improvebonding strengthVSAvoidbonding reliability
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent applies different bonding temperatures for the first and second supports. The first support is bonded at a first temperature, and the second support is bonded at a second temperature that is lower than the first temperature. This parameter change prevents the first adhesive from softening during the second bonding process while ensuring adequate bonding strength for the second support.

Inventive Principle:
Principle #35Parameter changes

2Strength

If the adhesion between the second support and the semiconductor wafer is high, then the bonding strength is improved, but residues of the second adhesive may be formed on the semiconductor wafer when the second support is debonded

Engineering Contradiction:
Improvebonding strengthVSAvoidadhesive residues
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

The patent controls the bonding temperature for the second support to be lower than the first temperature. This temperature parameter change creates an optimal adhesion level that is sufficient for bonding but not so strong that it causes adhesive residues during debonding, thereby eliminating the harmful effect of residues on the semiconductor wafer.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Prevents adhesive residues on the semiconductor wafer and maintains the integrity of the first support bond by ensuring low adhesion and controlled temperature bonding.

Implementation Method 1

a heater that heats one or both of the second support and the semiconductor wafer at a second temperature that is lower than the first temperature

Methodology Applied
Scientific EffectHeating: Heating

Data Source

PatentUS20260090438A1Substrate bonding device, substrate processing system, and substrate bonding method
Publication Date: 2026.03.26 TOKYO OHKA KOGYO CO LTD
  • US20260090438A1 patent drawing
  • US20260090438A1 patent drawing
  • US20260090438A1 patent drawing

AI summary

[Problem] To prevent formation of residues of a second adhesive on a semiconductor wafer during debonding by ensuring a low adhesion between a second support and the semiconductor wafer to prevent the two from adhering together too firmly while preventing bonding failure of a first support, even when the second support is bonded to a second surface of the semiconductor wafer.[Means to Solve Problem] A substrate bonding device 1 includes: a bonder 10 that bonds a second support 110 to a second surface Sb, which is on an opposite side to a first surface Sa of a semiconductor wafer W, via a second adhesive 60, with the first surface Sa having a first support 100 bonded thereto at a first temperature via a first adhesive 50; and a heater 20 that heats one or both of the second support 110 and the semiconductor wafer W at a second temperature that is lower than the first temperature.